FDS6982S_NL ,Dual Notebook Power Supply N-Channel PowerTrench SyncFetFeaturesThe FDS6982S is designed to replace two single SO-8 • Q2: Optimized to minimize conduction ..
FDS6984AS Features The FDS6984AS is designed to replace two single • Q2: Optimized to minimize conduction l ..
FDS6984S ,Dual Notebook Power Supply N-Channel PowerTrench SyncFET TMFeaturesThe FDS6984S is designed to replace two single SO-8 • Q2: Optimized to minimize conduction ..
FDS6984S_NL ,Dual Notebook Power Supply N-Channel PowerTrench SyncFetElectrical Characteristics T = 25°C unless otherwise notedASymbol Parameter Test Conditions Type Mi ..
FDS6986AS ,Dual Notebook Power Supply N-Channel PowerTrench SyncFETFeatures The FDS6986AS is designed to replace two single SO- • Q2: Optimized to minimize conduction ..
FDS6986S ,Dual Notebook Power Supply N-Channel PowerTrench SyncFET TMFeatures The FDS6986S is designed to replace two single SO-8 • Q2: Optimized to minimize conductio ..
FQT3P20 ,200V P-Channel MOSFETFeaturestransistors are produced using Fairchild’s proprietary,planar stripe, DMOS technology.• -0. ..
FQT3P20TF ,200V P-Channel QFETGeneral DescriptionThese P-Channel enhancement mode power field effect
FQT4N20 ,200V N-Channel MOSFETFQT4N20May 2001TMQFETFQT4N20200V N-Channel MOSFET
FQT4N20L ,200V LOGIC N-Channel MOSFETFeaturesThese N-Channel enhancement mode power field effect • 0.85A, 200V, R = 1.35Ω @V = 10 VDS(on ..
FQT4N20LTF ,200V N-Channel Logic Level QFETFeaturesThese N-Channel enhancement mode power field effect • 0.85A, 200V, R = 1.35Ω @V = 10 VDS(on ..
FQT4N20TF ,200V N-Channel QFETFeaturesThese N-Channel enhancement mode power field effect • 0.85A, 200V, R = 1.4Ω @V = 10 VDS(on) ..
FDS6982S_NL
Dual Notebook Power Supply N-Channel PowerTrench SyncFet
FDS6982S September 2000 FDS6982S ™ Dual Notebook Power Supply N-Channel PowerTrench SyncFet General Description Features The FDS6982S is designed to replace two single SO-8 • Q2: Optimized to minimize conduction losses MOSFETs and Schottky diode in synchronous DC:DC Includes SyncFET Schottky body diode power supplies that provide various peripheral voltages 8.6A, 30V R = 0.016Ω=@ V = 10V DS(on) GS for notebook computers and other battery powered electronic devices. FDS6982S contains two unique R = 0.022Ω=@ V = 4.5V DS(on) GS 30V, N-channel, logic level, PowerTrench MOSFETs designed to maximize power conversion efficiency. • Q1: Optimized for low switching losses Low Gate Charge ( 8.5 nC typical) The high-side switch (Q1) is designed with specific emphasis on reducing switching losses while the low- 6.3A, 30V R = 0.028Ω=@ V = 10V DS(on) GS side switch (Q2) is optimized to reduce conduction R = 0.035Ω=@ V = 4.5V losses. Q2 also includes an integrated Schottky diode DS(on) GS using Fairchild’s monolithic SyncFET technology. D1 5 4 D1 D2 Q1 6 3 D2 7 2 Q2 G1 8 1 S1 SO-8 G2 S2 Absolute Maximum Ratings T = 25°C unless otherwise noted A Symbol Parameter Q2 Q1 Units V Drain-Source Voltage 30 30 V DSS V Gate-Source Voltage ±20 ±20 V GSS I Drain Current - Continuous (Note 1a) 8.6 6.3 A D - Pulsed 30 20 P Power Dissipation for Dual Operation 2 W D Power Dissipation for Single Operation (Note 1a) 1.6 (Note 1b) 1 (Note 1c) 0.9 T , T Operating and Storage Junction Temperature Range -55 to +150 °C J STG Thermal Characteristics Thermal Resistance, Junction-to-Ambient (Note 1a) 78 R °C/W θJA R Thermal Resistance, Junction-to-Case (Note 1) 40 °C/W θJC Package Marking and Ordering Information Device Marking Device Reel Size Tape width Quantity FDS6982S FDS6982S 13” 12mm 2500 units 2000 FDS6982S Rev C(W)
