FDS6961AZ ,Dual N-Channel Logic Level PowerTrench MOSFETFeatures These N-Channel Logic Level MOSFETs are produced • 3.5 A, 30 V. R = 90 mΩ @ V = 10 V DS(ON ..
FDS6975 ,Dual P-Channel, Logic Level, PowerTrench TM MOSFETFeatures P-Channel Logic Level MOSFETs are A, -30 V. R = 0.032 Ω @ V = -10 V, )pro ..
FDS6975_NL ,Dual P-Channel Logic Level PowerTrench MOSFETapplications: load switching and power management,battery charging circuits,T M T M45632718G1pin1oT ..
FDS6982 ,Dual N-Channel, Notebook Power Supply MOSFETFeaturesThis part is designed to replace two single SO-8 MOSFETs• Q2: 8.6A, 30V. R = 0.015 Ω @ V ..
FDS6982_NL ,Dual N-Channel Notebook Power Supply MOSFETElectrical Characteristics T = 25°C unless otherwise notedASymbol Parameter Test Conditions Ty ..
FDS6982_NL ,Dual N-Channel Notebook Power Supply MOSFETApplications• Battery powered synchronous DC:DC converters.• Embedded DC:DC conversion.D1D15 4Q1D2D ..
FQPF85N06 ,60V N-Channel MOSFETapplications such as automotive, DC/DC converters, and high efficiency switching for powermanagemen ..
FQPF8N60C ,600V N-Channel Advance Q-FET C-SeriesFQP8N60C/FQPF8N60C®QFETFQP8N60C/FQPF8N60C600V N-Channel MOSFET
FQPF8N60CF ,N-Channel QFET?FRFET?MOSFET 600V, 6.26A, 1.5?FeaturesDescriptionThis N-Channel enhancement mode power MOSFET is • 7.5 A, 600 V, R = 1.2 Ω(Max.) ..
FQPF8N80C ,800V N-Channel Advance Q-FET C-SeriesFQP8N80C/FQPF8N80CTMQFETFQP8N80C/FQPF8N80C800V N-Channel MOSFET
FQPF9N30 ,300V N-Channel MOSFETMay 2000TMQFET QFET QFET QFETFQPF9N30300V N-Channel MOSFET
FQPF9N30 ,300V N-Channel MOSFETFeaturesThese N-Channel enhancement mode power field effect • 6.0A, 300V, R = 0.45Ω @V = 10 VDS(on) ..
FDS6961AZ
Dual N-Channel Logic Level PowerTrench MOSFET
FDS6961AZ September 2001 FDS6961AZ Ò Ò Dual N-Channel Logic Level PowerTrench MOSFET General Description Features These N-Channel Logic Level MOSFETs are produced · 3.5 A, 30 V. R = 90 mW @ V = 10 V DS(ON) GS using Fairchild Semiconductor’s advanced R = 140 mW @ V = 4.5 V DS(ON) GS PowerTrench process that has been especially tailored · Low gate charge (2.1 nC typical) to minimize the on-state resistance and yet maintain superior switching performance. · ESD protection diode (note 3) These devices are well suited for low voltage and battery powered applications where low in-line power · High performance trench technology for extremely loss and fast switching are required. low RDS(ON) · High power and current handling capability 5 4 Q1 6 3 7 2 Q2 8 1 o Absolute Maximum Ratings T =25 C unless otherwise noted A Symbol Parameter Ratings Units V Drain-Source Voltage 30 V DSS VGSS Gate-Source Voltage ±20 V I Drain Current – Continuous (Note 1a) 3.5 A D – Pulsed 14 P W D Power Dissipation for Dual Operation 2 Power Dissipation for Single Operation (Note 1a) 1.6 (Note 1b) 1 (Note 1c) 0.9 T , T Operating and Storage Junction Temperature Range –55 to +150 °C J STG Thermal Characteristics RqJA Thermal Resistance, Junction-to-Ambient (Note 1a) 78 °C/W R Thermal Resistance, Junction-to-Case (Note 1) 40 °C/W qJC Package Marking and Ordering Information Device Marking Device Reel Size Tape width Quantity FDS6961AZ FDS6961AZ 13’’ 12mm 2500 units Ó2001 FDS6961AZ Rev C (W)
