FDS6930B ,30V Dual N-Channel Logic Level PowerTrench?MOSFETGeneral Description 5.5 A, 30 V. R = 38 mΩ @ V = 10 V These N-Channel Logic Level MOSFETs are produ ..
FDS6961 ,Dual N-Channel Logic Level PowerTrenchTM MOSFETFeaturesDescriptionGeneral MOSFET Logic LevelDS6961OAV Vo oI C CΔ / Δ TJI V V 1 µ AT µ AI VI V) ..
FDS6961A ,Dual N-Channel Logic Level PowerTrench TM MOSFETFeaturesDescriptionGeneral MOSFET Logic LevelDS6961OAV Vo oI C CΔ / Δ TJI V V 1 µ AT µ AI VI V) ..
FDS6961A_NL ,Dual N-Channel Logic Level PowerTrench MOSFETFeaturesDescriptionGeneral MOSFET Logic LevelDS6961OAV Vo oI C CΔ / Δ TJI V V 1 µ AT µ AI VI V) ..
FDS6961AZ ,Dual N-Channel Logic Level PowerTrench MOSFETFeatures These N-Channel Logic Level MOSFETs are produced • 3.5 A, 30 V. R = 90 mΩ @ V = 10 V DS(ON ..
FDS6975 ,Dual P-Channel, Logic Level, PowerTrench TM MOSFETFeatures P-Channel Logic Level MOSFETs are A, -30 V. R = 0.032 Ω @ V = -10 V, )pro ..
FQPF6N80 ,800V N-Channel MOSFETFeaturesThese N-Channel enhancement mode power field effect 3.3A, 800V, R = 1.95Ω @V = 10 VDS(on) ..
FQPF6N80C ,800V N-Channel Advance Q-FET C-Series
FQPF6N80C ,800V N-Channel Advance Q-FET C-Series
FQPF6N80C ,800V N-Channel Advance Q-FET C-Series
FQPF6N90 ,QFET N-CHANNELFEATURESBV = 900VDSS• Advanced New DesignR = 1.9ΩDS(ON)• Avalanche Rugged TechnologyI = 3.4AD• Rugg ..
FQPF6P25 ,250V P-Channel MOSFETFeaturesThese P-Channel enhancement mode power field effect -4.2A, -250V, R = 1.1Ω @V = -10 VDS(o ..
FDS6930B
30V Dual N-Channel Logic Level PowerTrench?MOSFET
® FDS6930B Dual N-Channel Logic Level PowerTrench MOSFET March 2010 FDS6930B ® Dual N-Channel Logic Level PowerTrench MOSFET Features General Description ■ 5.5 A, 30 V. R = 38 mΩ @ V = 10 V These N-Channel Logic Level MOSFETs are produced using DS(ON) GS R = 50 mΩ @ V = 4.5 V Fairchild Semiconductor’s advanced PowerTrench process that DS(ON) GS has been especially tailored to minimize the on-state resistance ■ Fast switching speed and yet maintain superior switching performance. ■ Low gate charge These devices are well suited for low voltage and battery pow- ■ High performance trench technology for extremely ered applications where low in-line power loss and fast switch- low R DS(ON) ing are required. ■ High power and current handling capability D2 5 4 D2 D1 6 3 D1 7 2 G2 S2 SO-8 G1 8 1 S1 Pin 1 Absolute Maximum Ratings T = 25°C unless otherwise noted A Symbol Parameter Ratings Units V Drain-Source Voltage 30 V DSS V Gate-Source Voltage ± 20 V GSS I Drain Current – Continuous (Note 1a) 5.5 A D – Pulsed 20 P Power Dissipation for Dual Operation (Note 1) 2 W D Power Dissipation for Single Operation (Note 1a) 1.6 (Note 1b) 1 (Note 1c) 0.9 T , T Operating and Storage Junction Temperature Range –55 to 150 °C J STG Thermal Characteristics R Thermal Resistance, Junction-to-Ambient (Note 1a) 78 °C/W θJA R Thermal Resistance, Junction-to-Case (Note 1) 40 °C/W θJC Package Marking and Ordering Information Device Marking Device Reel Size Tape width Quantity FDS6930B FDS6930B 13" 12mm 2500 units ©2010 1 FDS6930B Rev. A1
