FDS6912_NL ,Dual N-Channel Logic Level PWM Optimized PowerTrench MOSFETFeaturesThese N-Channel Logic Level MOSFETs have been • 6 A, 30 V. R = 0.028 Ω @ V = 10 VDS(ON) GSd ..
FDS6912A ,Dual N-Channel, Logic Level, PowerTrench TM MOSFETFeatures6 A, 30 V. R = 0.028 Ω @ V = 10 V These N-Channel Logic Level MO ..
FDS6912A_NL ,Dual N-Channel Logic Level PowerTrench MOSFETapplications where low in-line power• High performance trench technology for extremelyloss and fast ..
FDS6930A ,Dual N-Channel, Logic Level, PowerTrench TM MOSFETFeaturesDescription General N-CDualDS693 October ..
FDS6930B ,30V Dual N-Channel Logic Level PowerTrench?MOSFETGeneral Description 5.5 A, 30 V. R = 38 mΩ @ V = 10 V These N-Channel Logic Level MOSFETs are produ ..
FDS6961 ,Dual N-Channel Logic Level PowerTrenchTM MOSFETFeaturesDescriptionGeneral MOSFET Logic LevelDS6961OAV Vo oI C CΔ / Δ TJI V V 1 µ AT µ AI VI V) ..
FQPF50N06L ,60V LOGIC N-Channel MOSFETapplications such as automotive, DC/DC converters, and high efficiency switching for powermanagemen ..
FQPF5N30 ,300V N-Channel MOSFET
FQPF5N30 ,300V N-Channel MOSFET
FQPF5N50CF ,500V N-Channel QFET?C-SeriesFQPF5N50CF 500V N-Channel MOSFETTMFRFETFQPF5N50CF 500V N-Channel MOSFET
FQPF5N80 ,800V N-Channel MOSFETSeptember 2000TMQFETFQPF5N80800V N-Channel MOSFET
FQPF5N80 ,800V N-Channel MOSFETFeaturesThese N-Channel enhancement mode power field effect 2.8A, 800V, R = 2.6Ω @V = 10 VDS(on) ..
FDS6912_NL
Dual N-Channel Logic Level PWM Optimized PowerTrench MOSFET
FDS6912 July 2000 FDS6912 Dual N-Channel Logic Level PWM Optimized PowerTrench MOSFET General Description Features These N-Channel Logic Level MOSFETs have been • 6 A, 30 V. R = 0.028 Ω @ V = 10 V DS(ON) GS designed specifically to improve the overall efficiency of R = 0.042 Ω @ V = 4.5 V. DS(ON) GS DC/DC converters using either synchronous or • Optimized for use in switching DC/DC converters conventional switching PWM controllers. with PWM controllers These MOSFETs feature faster switching and lower gate charge than other MOSFETs with comparable • Very fast switching. RDS(ON) specifications. • Low gate charge The result is a MOSFET that is easy and safer to drive (even at very high frequencies), and DC/DC power supply designs with higher overall efficiency. D1 5 4 D1 D2 Q1 6 3 D2 7 2 Q2 G1 8 1 S1 SO-8 G2 S2 o T =25 C unless otherwise noted Absolute Maximum Ratings A Symbol Parameter Ratings Units V Drain-Source Voltage 30 V DSS V Gate-Source Voltage V GSS ±25 I Drain Current – Continuous (Note 1a) 6A D – Pulsed 20 P W D Power Dissipation for Dual Operation 2 Power Dissipation for Single Operation (Note 1a) 1.6 (Note 1b) 1 (Note 1c) 0.9 T , T Operating and Storage Junction Temperature Range -55 to +150 °C J stg Thermal Characteristics (Note 1a) R Thermal Resistance, Junction-to-Ambient 78 °C/W θJA Thermal Resistance, Junction-to-Case (Note 1) 40 R °C/W θJC Package Marking and Ordering Information Device Marking Device Reel Size Tape width Quantity FDS6912 FDS6912 13’’ 12mm 2500 units FDS6912 Rev F (W) 2000
