FDS6910_NL ,30V Dual N-Channel Logic Level PowerTrench MOSFETFDS6910 September 2004 FDS6910 Dual N-Channel Logic Level PowerTrench MOSFET
FDS6911 ,20V Dual N-Channel Logic Level PowerTrench?MOSFETElectrical Characteristics T = 25°C unless otherwise noted ASymbol Parameter Test Conditions MinTyp ..
FDS6912 ,Dual N-Channel Logic Level PWM Optimized PowerTrench MOSFETFeaturesThese N-Channel Logic Level MOSFETs have been • 6 A, 30 V. R = 0.028 Ω @ V = 10 VDS(ON) GSd ..
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FDS6912A ,Dual N-Channel, Logic Level, PowerTrench TM MOSFETFeatures6 A, 30 V. R = 0.028 Ω @ V = 10 V These N-Channel Logic Level MO ..
FDS6912A_NL ,Dual N-Channel Logic Level PowerTrench MOSFETapplications where low in-line power• High performance trench technology for extremelyloss and fast ..
FQPF4N80 ,800V N-Channel MOSFETFeaturesThese N-Channel enhancement mode power field effect 2.2A, 800V, R = 3.6Ω @V = 10 VDS(on) ..
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FDS6910-FDS6910_NL
30V Dual N-Channel Logic Level PowerTrench MOSFET
FDS6910 September 2004 FDS6910 Dual N-Channel Logic Level PowerTrench MOSFET General Description Features These N-Channel Logic Level MOSFETs are produced • 7.5 A, 30 V. R = 13 mΩ @ V = 10 V DS(ON) GS using Fairchild Semiconductor’s advanced R = 17 mΩ @ V = 4.5 V DS(ON) GS PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain • Fast switching speed superior switching performance. • Low gate charge These devices are well suited for low voltage and battery powered applications where low in-line power • High performance trench technology for extremely loss and fast switching are required. low R DS(ON) • High power and current handling capability D1 D 5 4 D1 D D2 D Q1 6 3 D2 D 7 2 G1 SO-8 Q2 G S1 8 1 S G2 S S2 SO-8 S Pin 1 o Absolute Maximum Ratings T =25 C unless otherwise noted A Symbol Parameter Ratings Units V Drain-Source Voltage 30 V DSS V Gate-Source Voltage ± 20 V GSS ID Drain Current – Continuous (Note 1a) 7.5 A – Pulsed 20 P W D Power Dissipation for Single Operation (Note 1a) 1.6 (Note 1b) 1.0 (Note 1c) 0.9 T , T Operating and Storage Junction Temperature Range –55 to +150 J STG °C Thermal Characteristics Thermal Resistance, Junction-to-Ambient (Note 1a) 78 R °C/W θJA Thermal Resistance, Junction-to-Case (Note 1) 40 R °C/W θJC Package Marking and Ordering Information Device Marking Device Reel Size Tape width Quantity FDS6910 FDS6910 13’’ 12mm 2500 units FDS6910 Rev BW) 2004
