FDS6898A ,Dual N-Channel Logic Level PWM Optimized PowerTrench MOSFETGeneral Description MOSFETDual N-Channel Logic Level PWM Optimized PowerTrenchOCTOBER 2001FDS6898A
FDS6898A_NL ,Dual N-Channel Logic Level PWM Optimized PowerTrench MOSFETapplications where low in-line powerloss and fast switching are required.• High power and current h ..
FDS6898AZ ,Dual N-Channel Logic Level PWM Optimized PowerTrench MOSFETapplications where low in-line power• High performance trench technology for extremelyloss and fast ..
FDS6898AZ ,Dual N-Channel Logic Level PWM Optimized PowerTrench MOSFETGeneral Description MOSFETDual N-Channel Logic Level PWM Optimized PowerTrenchOctober 2001FDS6898AZ
FDS6898AZ ,Dual N-Channel Logic Level PWM Optimized PowerTrench MOSFETFDS6898AZFDS6898AZ® ®These N-Channel Logic Level MOSFETs are produced • 9.4 A, 20 VR = 14 m Ω @ V ..
FDS6898AZ_F085 ,20V Dual N-Channel Logic Level PWM Optimized PowerTrench?MOSFETapplications where low in-line powerlow RDS(ON)loss and fast switching are required.• High power an ..
FQPF32N20C ,200V N-Channel Advance Q-FET C-SeriesFQP32N20C/FQPF32N20C®QFETFQP32N20C/FQPF32N20C200V N-Channel MOSFET
FQPF33N10 ,100V N-Channel MOSFETapplications such as audio amplifier,high efficiency switching DC/DC converters, and DC motorcontro ..
FQPF33N10L ,100V LOGIC N-Channel MOSFETapplications such as high efficiencyswitching DC/DC converters, and DC motor control.D! !""!!""""G! ..
FQPF34N20 ,200V N-Channel MOSFET
FQPF3N25 ,250V N-Channel MOSFETFeaturesThese N-Channel enhancement mode power field effect 2.3A, 250V, R = 2.2Ω @V = 10 VDS(on) ..
FQPF3N50C , 500V N-Channel MOSFET
FDS6898A
Dual N-Channel Logic Level PWM Optimized PowerTrench MOSFET
FDS6898A OCTOBER 2001 FDS6898A Ò Ò Dual N-Channel Logic Level PWM Optimized PowerTrench MOSFET General Description Features These N-Channel Logic Level MOSFETs are produced · 9.4 A, 20 V R = 14 m W @ V = 4.5 V DS(ON) GS using Fairchild Semiconductor’s advanced R = 18 m W @ V = 2.5 V DS(ON) GS PowerTrench process that has been especially tailored · Low gate charge (16 nC typical) to minimize the on-state resistance and yet maintain superior switching performance. · High performance trench technology for extremely These devices are well suited for low voltage and low R DS(ON) battery powered applications where low in-line power loss and fast switching are required. · High power and current handling capability D1 D 5 4 D1 D D2 D Q1 6 3 D2 D 7 2 G1 Q2 SO-8 G S1 8 1 S G2 S S2 SO-8 S Pin 1 o Absolute Maximum Ratings T =25 C unless otherwise noted A Symbol Parameter Ratings Units V Drain-Source Voltage 20 V DSS V GSS Gate-Source Voltage ± 12 V I Drain Current – Continuous (Note 1a) 9.4 A D – Pulsed 38 P W D Power Dissipation for Dual Operation 2 Power Dissipation for Single Operation (Note 1a) 1.6 (Note 1b) 1 (Note 1c) 0.9 T , T Operating and Storage Junction Temperature Range –55 to +150 °C J STG Thermal Characteristics R Thermal Resistance, Junction-to-Ambient (Note 1a) 78 °C/W qJA R Thermal Resistance, Junction-to-Case (Note 1) 40 °C/W qJC Package Marking and Ordering Information Device Marking Device Reel Size Tape width Quantity FDS6898A FDS6898A 13’’ 12mm 2500 units Ó2001 FDS6898A Rev C (W)
