FDS6894A ,Dual N-Channel Logic Level PWM Optimized PowerTrench MOSFETapplications where low in-line powerloss and fast switching are required.• High power and current h ..
FDS6894A_NL ,Dual N-Channel Logic Level PWM Optimized PowerTrench MOSFETapplications where low in-line powerloss and fast switching are required.• High power and current h ..
FDS6894AZ ,Dual N-Channel Logic Level PWM Optimized PowerTrench MOSFETGeneral Description MOSFETPowerTrenchOctober 2001FDS6894AZ
FDS6898A ,Dual N-Channel Logic Level PWM Optimized PowerTrench MOSFETGeneral Description MOSFETDual N-Channel Logic Level PWM Optimized PowerTrenchOCTOBER 2001FDS6898A
FDS6898A_NL ,Dual N-Channel Logic Level PWM Optimized PowerTrench MOSFETapplications where low in-line powerloss and fast switching are required.• High power and current h ..
FDS6898AZ ,Dual N-Channel Logic Level PWM Optimized PowerTrench MOSFETapplications where low in-line power• High performance trench technology for extremelyloss and fast ..
FQPF2N70 ,700V N-Channel Q-FETFeaturesThese N-Channel enhancement mode power field effect 2.0A, 700V, R = 6.3Ω @V = 10 VDS(on) ..
FQPF2N70 ,700V N-Channel Q-FETFQPF2N70TMQFETFQPF2N70700V N-Channel MOSFET
FQPF2N80 ,800V N-Channel MOSFETFeaturesThese N-Channel enhancement mode power field effect 1.5A, 800V, R = 6.3Ω @V = 10 VDS(on) ..
FQPF2N80 ,800V N-Channel MOSFETSeptember 2000TMQFETFQPF2N80800V N-Channel MOSFET
FQPF2P25 ,250V P-Channel MOSFETFeaturesThese P-Channel enhancement mode power field effect -1.8A, -250V, R = 4.0Ω @V = -10 VDS(o ..
FQPF30N06 ,60V N-Channel MOSFETapplications such as automotive, DC/DC converters, and high efficiency switching for powermanagemen ..
FDS6894A
Dual N-Channel Logic Level PWM Optimized PowerTrench MOSFET
FDS6894A October 2001 FDS6894A Ò Ò Dual N-Channel Logic Level PWM Optimized PowerTrench MOSFET General Description Features These N-Channel Logic Level MOSFETs are produced · 8 A, 20 V. R = 17 m W @ V = 4.5 V DS(ON) GS using Fairchild Semiconductor’s advanced R = 20 m W @ V = 2.5 V DS(ON) GS PowerTrench process that has been especially tailored R = 30 m W @ V = 1.8 V DS(ON) GS to minimize the on-state resistance and yet maintain superior switching performance. · Low gate charge (17 nC) These devices are well suited for low voltage and · High performance trench technology for extremely battery powered applications where low in-line power low R DS(ON) loss and fast switching are required. · High power and current handling capability D1 D 5 4 D1 D D2 D Q1 6 3 D2 D 7 2 G1 Q2 SO-8 G S1 8 1 S G2 S S2 SO-8 S Pin 1 o Absolute Maximum Ratings T =25 C unless otherwise noted A Symbol Parameter Ratings Units V Drain-Source Voltage 20 V DSS V Gate-Source Voltage V GSS ± 8 I Drain Current – Continuous (Note 1a) 8 A D – Pulsed 32 P W D Power Dissipation for Dual Operation 2 Power Dissipation for Single Operation (Note 1a) 1.6 (Note 1b) 1 (Note 1c) 0.9 T , T Operating and Storage Junction Temperature Range –55 to +150 °C J STG Thermal Characteristics R Thermal Resistance, Junction-to-Ambient (Note 1a) 78 °C/W qJA R Thermal Resistance, Junction-to-Case (Note 1) 40 °C/W qJC Package Marking and Ordering Information Device Marking Device Reel Size Tape width Quantity FDS6894A FDS6894A 13’’ 12mm 2500 units Ó2001 FDS6894A Rev C (W)
