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| FDS6892A_NL ,Dual N-Channel Logic Level PWM Optimized PowerTrench MOSFETapplications where low in-line powerloss and fast switching are required.• High power and current h .. FDS6892AZ ,Dual N-Channel Logic Level PWM Optimized PowerTrench MOSFETapplications where low in-line powerloss and fast switching are required.• High power and current h .. FDS6894A ,Dual N-Channel Logic Level PWM Optimized PowerTrench MOSFETapplications where low in-line powerloss and fast switching are required.• High power and current h .. FDS6894A_NL ,Dual N-Channel Logic Level PWM Optimized PowerTrench MOSFETapplications where low in-line powerloss and fast switching are required.• High power and current h .. FDS6894AZ ,Dual N-Channel Logic Level PWM Optimized PowerTrench MOSFETGeneral Description MOSFETPowerTrenchOctober 2001FDS6894AZ FDS6898A ,Dual N-Channel Logic Level PWM Optimized PowerTrench MOSFETGeneral Description MOSFETDual N-Channel Logic Level PWM Optimized PowerTrenchOCTOBER 2001FDS6898A FQPF2N40 ,400V N-Channel MOSFET FQPF2N60 ,600V N-Channel MOSFETFeaturesThese N-Channel enhancement mode power field effect 1.6A, 600V, R = 4.7Ω @V = 10 VDS(on) .. FQPF2N60C ,600V N-Channel Advance Q-FET C-SeriesFQP2N60C/FQPF2N60CTMQFETFQP2N60C/FQPF2N60C600V N-Channel MOSFET FQPF2N70 ,700V N-Channel Q-FETFeaturesThese N-Channel enhancement mode power field effect 2.0A, 700V, R = 6.3Ω @V = 10 VDS(on) .. FQPF2N70 ,700V N-Channel Q-FETFQPF2N70TMQFETFQPF2N70700V N-Channel MOSFET FQPF2N80 ,800V N-Channel MOSFETFeaturesThese N-Channel enhancement mode power field effect 1.5A, 800V, R = 6.3Ω @V = 10 VDS(on) .. FDS6892A_NL | ||||||||||||
| Dual N-Channel Logic Level PWM Optimized PowerTrench MOSFET FDS6892A October 2001 FDS6892A Ò Ò Dual N-Channel Logic Level PWM Optimized PowerTrench MOSFET General Description Features These N-Channel Logic Level MOSFETs are produced · 7.5 A, 20 V. R = 18 m W @ V = 4.5 V DS(ON) GS using Fairchild Semiconductor’s advanced R = 24 m W @ V = 2.5 V DS(ON) GS PowerTrench process that has been especially tailored · Low gate charge (12 nC) to minimize the on-state resistance and yet maintain superior switching performance. · High performance trench technology for extremely These devices are well suited for low voltage and low R DS(ON) battery powered applications where low in-line power loss and fast switching are required. · High power and current handling capability D1 D 5 4 D1 D D2 D Q1 6 3 D2 D 7 2 G1 Q2 SO-8 G S1 8 1 S G2 S S2 SO-8 S Pin 1 o Absolute Maximum Ratings T =25 C unless otherwise noted A Symbol Parameter Ratings Units V Drain-Source Voltage 20 V DSS V GSS Gate-Source Voltage ± 12 V I Drain Current – Continuous (Note 1a) 7.5 A D – Pul sed 30 P W D Power Dissipation for Dual Operation 2 Power Dissipation for Single Operation (Note 1a) 1.6 (Note 1b) 1 (Note 1c) 0.9 T , T Operating and Storage Junction Temperature Range –55 to +150 °C J STG Thermal Characteristics R Thermal Resistance, Junction-to-Ambient (Note 1a) 78 °C/W qJA R Thermal Resistance, Junction-to-Case (Note 1) 40 °C/W qJC Package Marking and Ordering Information Device Marking Device Reel Size Tape width Quantity FDS6892A FDS6892A 13’’ 12mm 2500 units Ó2001 FDS6892A Rev C (W) | ||||||||||||
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