FDS6890A ,Dual N-Channel 2.5V Specified PowerTrench TM MOSFETFeaturesThese N-Channel 2.5V specified MOSFETs are• 7.5 A, 20 V. R = 0.018 Ω @ V = 4.5 VDS(ON) GSp ..
FDS6890A_NL ,Dual N-Channel 2.5V Specified PowerTrench MOSFETApplicationslow R .DS(ON) DC/DC converter High power and current handling capability. Motor driv ..
FDS6890A_NL. ,Dual N-Channel 2.5V Specified PowerTrench MOSFETFeaturesThese N-Channel 2.5V specified MOSFETs are• 7.5 A, 20 V. R = 0.018 Ω @ V = 4.5 VDS(ON) GSp ..
FDS6892 ,Dual N-Channel Logic Level PWM Optimized PowerTrench MOSFETapplications where low in-line powerloss and fast switching are required.• High power and current h ..
FDS6892 ,Dual N-Channel Logic Level PWM Optimized PowerTrench MOSFETFDS6892AFDS6892A® ®These N-Channel Logic Level MOSFETs are produced • 7.5 A, 20 V.R = 18 m Ω @ V = ..
FDS6892A ,Dual N-Channel Logic Level PWM Optimized PowerTrench MOSFETGeneral Description MOSFETDual N-Channel Logic Level PWM Optimized PowerTrenchOctober 2001FDS6892A
FQPF19N20C ,200V N-Channel Advance Q-FET C-SeriesFeaturesThese N-Channel enhancement mode power field effect • 19.0A, 200V, R = 0.17Ω @V = 10 VDS(on ..
FQPF1N60 ,600V N-Channel MOSFETFeaturesThese N-Channel enhancement mode power field effect 0.9A, 600V, R = 11.5Ω @V = 10 VDS(on) ..
FQPF20N06 ,60V N-Channel MOSFETapplications such as automotive, DC/DC converters, and high efficiency switching for powermanagemen ..
FQPF20N06 ,60V N-Channel MOSFETFeaturesThese N-Channel enhancement mode power field effect • 15A, 60V, R = 0.06Ω @V = 10 VDS(on) G ..
FQPF20N06L ,60V LOGIC N-Channel MOSFETapplications such as automotive, DC/DC converters, and high efficiency switching for powermanagemen ..
FQPF22N30 ,300V N-Channel MOSFET
FDS6890A
Dual N-Channel 2.5V Specified PowerTrench TM MOSFET
FDS6890A November 1999 FDS6890A TM Dual N-Channel 2.5V Specified PowerTrench MOSFET General Description Features These N-Channel 2.5V specified MOSFETs are • . R7.5 A, 20 V = 0.018 Ω @ V = 4.5 V GS R = 0.022 Ω @ V. = 2.5 V )GS Applications low R. ) DC/DC converter . Motor drives D2 D2 5 4 D1 D1 6 3 2 7 G2 S2 G1 8 1 pin 1 S1 SO-8 o Absolute Maximum Ratings T =25 C unless otherwise noted A Symbol Parameter Ratings Units V Drain-Source Voltage 20 V DSS VGSS Gate-Source Voltage ±8 V I Drain Current - Continuous (Note 1a) 7.5 A D - Pulsed 20 P Power Dissipation for Dual Operation 2.0 W D Power Dissipation for Single Operation (Note 1a) 1.6 (Note 1b) 1.0 (Note 1c) 0.9 Operating and Storage Junction Temperature Range -55 to +150 T , T °C J stg Thermal Characteristics (Note 1a) R Thermal Resistance, Junction-to-Ambient 78 °C/W JA θ Thermal Resistance, Junction-to-Case (Note 1) 40 R °C/W JC θ 90 Package Marking and Ordering Information Device Marking Device Reel Size Tape Width Quantity FDS6890A FDS6890A 13 12mm 2500 units 1999 FDS6890A Rev. C High power and current handling capability DS(ON High performance trench technology for extremely Fast switching speed. low gate charge for superior switching performance. Low gate charge (23nC typical). to minimize the on-state resistance and yet maintain DS(ON PowerTrench process that has been especially tailored produced using Fairchild Semiconductor's advanced DS(ON)
