FDS6694 ,30V N-Channel Fast Switching PowerTrench MOSFETFeatures This N-Channel MOSFET has been designed • 12 A, 30 V. R = 11 mΩ @ V = 10 V DS(ON) GSspeci ..
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FDS6699S_NL ,30V N-Channel PowerTrench SyncFET®FDS6699S 30V N-Channel PowerTrench SyncFET™ ..
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FDS6812A_NL ,Dual N-Channel Logic Level PWM Optimized PowerTrench MOSFETapplications where low in-line powerloss and fast switching are required.• High power and current h ..
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FDS6694
30V N-Channel Fast Switching PowerTrench MOSFET
FDS6694 December 2001 FDS6694 Ò Ò 30V N-Channel Fast Switching PowerTrench MOSFET General Description Features This N-Channel MOSFET has been designed · 12 A, 30 V. R = 11 mW @ V = 10 V DS(ON) GS specifically to improve the overall efficiency of DC/DC RDS(ON) = 13.5 mW @ V GS = 4.5 V converters using either synchronous or conventional switching PWM controllers. It has been optimized for · Low gate charge (13 nC typical) low gate charge, low R and fast switching speed. DS(ON) · High performance trench technology for extremely Applications low R DS(ON) · DC/DC converter · High power and current handling capability. · Power management · Load switch D D 5 4 D D D D 6 3 D D 7 2 SO-8 G G 8 1 S S S S S Pin 1SO-8 S o Absolute Maximum Ratings T =25 C unless otherwise noted A Symbol Parameter Ratings Units VDSS Drain-Source Voltage 30 V V Gate-Source Voltage ±16 V GSS I Drain Current – Continuous (Note 1a) 12 A D – Pulsed 50 PD Power Dissipation for Single Operation (Note 1a) 2.5 W (Note 1b) 1.4 (Note 1c) 1.2 T , T Operating and Storage Junction Temperature Range –55 to +175 °C J STG Thermal Characteristics R Thermal Resistance, Junction-to-Ambient (Note 1a) 50 °C/W qJA RqJA Thermal Resistance, Junction-to-Ambient (Note 1c) 125 °C/W R Thermal Resistance, Junction-to-Case (Note 1) 25 °C/W qJC Package Marking and Ordering Information Device Marking Device Reel Size Tape width Quantity FDS6694 FDS6694 13’’ 12mm 2500 units Ó2001 FDS6694 Rev D(W)
