FDS6690S_NL ,30V N-Channel PowerTrench SyncFETApplications• High power and current handling capability• DC/DC converter• Motor drivesDD5 4DD6 37 ..
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FDS6692_NL ,30V N-Channel PowerTrench MOSFETFeatures This N-Channel MOSFET has been designed • 12 A, 30 V. R = 12 mΩ @ V = 10 V. DS(ON) GSspec ..
FDS6692A ,30V N-Channel PowerTrench?MOSFET®FDS6692A N-Channel PowerTrench MOSFETJanuary 2010FDS6692A®N-Channel PowerTrench MOSFET 30V, 9A, 11 ..
FDS6692A ,30V N-Channel PowerTrench?MOSFETApplications DC/DC convertersDD 5 4DD 6 3 7 2GSS 8 1SO-8 S2010 Fairchild Semiconductor Corporation ..
FDS6692A ,30V N-Channel PowerTrench?MOSFETFeatures General Description R = 11.5mΩ, V = 10V, I = 9A This N-Channel MOSFET has been designed ..
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FDS6690S_NL
30V N-Channel PowerTrench SyncFET
FDS6690S September 2000 FDS6690S ™ 30V N-Channel PowerTrench SyncFET General Description Features The FDS6690S is designed to replace a single SO-8 • 10 A, 30 V. R = 0.016 Ω @ V = 10 V DS(ON) GS MOSFET and Schottky diode in synchronous DC:DC R = 0.025 Ω @ V = 4.5 V DS(ON) GS power supplies. This 30V MOSFET is designed to maximize power conversion efficiency, providing a low • Includes SyncFET Schottky diode R and low gate charge. The FDS6690S includes DS(ON) an integrated Schottky diode using Fairchild’s • Low gate charge (20 nC typical) monolithic SyncFET technology. The performance of the FDS6690S as the low-side switch in a synchronous rectifier is close to the performance of the FDS6690A in • High performance trench technology for extremely low parallel with a Schottky diode. R DS(ON) Applications • High power and current handling capability • DC/DC converter • Motor drives D D 5 4 D D 6 3 7 2 G S 8 1 S SO-8 S o Absolute Maximum Ratings T =25 C unless otherwise noted A Symbol Parameter Ratings Units V Drain-Source Voltage 30 V DSS V Gate-Source Voltage V GSS ±20 I Drain Current – Continuous (Note 1a) 10 A D – Pulsed 50 P Power Dissipation for Single Operation (Note 1a) 2.5 W D (Note 1b) 1.2 (Note 1c) 1 T , T Operating and Storage Junction Temperature Range -55 to +150 °C J STG Thermal Characteristics Thermal Resistance, Junction-to-Ambient (Note 1a) 50 R °C/W θJA R Thermal Resistance, Junction-to-Case (Note 1) 25 °C/W θJC Package Marking and Ordering Information Device Marking Device Reel Size Tape width Quantity FDS6690S FDS6690S 13’’ 12mm 2500 units FDS6690S Rev C(W) 2000
