FDS6690A ,Single N-Channel, Logic Level, PowerTrench MOSFETFeaturesDescriptionGeneral MOSFET-Channel, Logic Level, PowerTrenchSingle NDS6690O( TAV Vo oI C CΔ ..
FDS6690A_NL ,Single N-Channel, Logic Level, Power Trench MOSFETapplications where low in-line powerloss and fast switching are required.• High performance trench ..
FDS6690AS ,30V N-Channel PowerTrench SyncFETFeatures The FDS6690AS is designed to replace a single SO-8 • 10 A, 30 V. R max= 12 mΩ @ V = 10 ..
FDS6690S ,30V N-Channel PowerTrench SyncFET TMFeaturesThe FDS6690S is designed to replace a single SO-8• 10 A, 30 V. R = 0.016 Ω @ V = 10 VDS(ON) ..
FDS6690S_NL ,30V N-Channel PowerTrench SyncFETApplications• High power and current handling capability• DC/DC converter• Motor drivesDD5 4DD6 37 ..
FDS6692 ,30V N-Channel PowerTrench MOSFETFeatures This N-Channel MOSFET has been designed • 12 A, 30 V. R = 12 mΩ @ V = 10 V. DS(ON) GSspec ..
FQP9N30 ,300V N-Channel MOSFET
FQP9N30 ,300V N-Channel MOSFET
FQPF10N20C ,200V N-Channel Advance Q-FET C-SeriesFQP10N20C/FQPF10N20CTMQFETFQP10N20C/FQPF10N20C200V N-Channel MOSFET
FQPF10N20C ,200V N-Channel Advance Q-FET C-SeriesFQP10N20C/FQPF10N20CTMQFETFQP10N20C/FQPF10N20C200V N-Channel MOSFET
FQPF10N20C ,200V N-Channel Advance Q-FET C-SeriesFeaturesThese N-Channel enhancement mode power field effect 9.5A, 200V, R = 0.36Ω @V = 10 VDS(on) ..
FQPF10N60C ,600V N-Channel Advance Q-FET C-SeriesFQP10N60C/FQPF10N60CTMQFETFQP10N60C/FQPF10N60C600V N-Channel MOSFET
FDS6690A
Single N-Channel, Logic Level, PowerTrench MOSFET
October 2001 F DS6690 A Single N -Channel, Logic Level, PowerTrench MOSFET General Description Features 11 A, 30 V. R = 0.0125 W @ V = 10 V, This N-Channel Logic Level MOSFET is DS(ON ) GS produced using Fairchild Semiconductor 's R = 0.017 W @ V = 4.5 V. DS(ON ) GS advanced PowerTrench process that has been Fast switching speed. especially tailored to minimize the on-state resistance and yet maintain superior switching Low gate charge. performance . High performance trench technology for These devices are well suited for low voltage and extremely low R . battery powered applications where low in-line DS(ON) power loss and fast switching are required. High power and current handling capability. T M T M SOIC-16 SOT-23 SuperSOT -6 SuperSOT -8 SO-8 SOT-223 D 5 4 D D 6 3 D 2 7 G S 8 1 1 S SO-8 S o Absolute Maximum Ratings T = 25 C unless other wise noted A Symbol Parameter Ratings Units V Drain-Source Voltage 30 V DSS V Gate-Source Voltage ± 20 V GSS I Drain Current - Continuous (Note 1a) 11 A D - Pulsed 5 0 P Power Dissipation for Single Operation (Note 1a) 2.5 W D (Note 1b) 1.2 (Note 1c) 1 T ,T Operating and Storage Temperature Range -55 to 150 °C J STG THERMAL CHARACTERISTICS R Thermal Resistance, Junction-to-Ambient (Note 1a ) 50 °C/W JA q R Thermal Resistance, Junction-to-Case (Note 1) 25 °C/W qJC FDS6690 A Rev.D © 2001 FDS 6690A pin
