FDS6689S ,30V N-Channel PowerTrench SyncFETApplications • High power and current handling capability • Synchronous Rectifier for DC/DC convert ..
FDS6690 ,Single N-Channel Logic Level PWM Optimized PowerTrench?MOSFETFeatures10 A, 30 V. R = 0.0135 Ω @ V = 10 V DS(ON) GSThis N Channel Logic Level MOSFET has been ..
FDS6690_NL ,Single N-Channel Logic Level PWM Optimized PowerTrench MOSFETElectrical Characteristics (T = 25 C unless otherwise noted )ASymbol Parameter Conditions Min Typ M ..
FDS6690A ,Single N-Channel, Logic Level, PowerTrench MOSFETFeaturesDescriptionGeneral MOSFET-Channel, Logic Level, PowerTrenchSingle NDS6690O( TAV Vo oI C CΔ ..
FDS6690A_NL ,Single N-Channel, Logic Level, Power Trench MOSFETapplications where low in-line powerloss and fast switching are required.• High performance trench ..
FDS6690AS ,30V N-Channel PowerTrench SyncFETFeatures The FDS6690AS is designed to replace a single SO-8 • 10 A, 30 V. R max= 12 mΩ @ V = 10 ..
FQP9N08L ,80V LOGIC N-Channel MOSFET
FQP9N15 ,150V N-Channel MOSFET
FQP9N25 ,250V N-Channel MOSFET
FQP9N25 ,250V N-Channel MOSFET
FQP9N30 ,300V N-Channel MOSFET
FQP9N30 ,300V N-Channel MOSFET
FDS6689S
30V N-Channel PowerTrench SyncFET
FDS6689S February 2005 FDS6689S ® ™ 30V N-Channel PowerTrench SyncFET General Description Features The FDS6689S is designed to replace a single SO-8 • 16 A, 30 V. R = 5.4 mΩ @ V = 10 V DS(ON) GS MOSFET and Schottky diode in synchronous DC:DC R = 6.5 mΩ @ V = 4.5 V DS(ON) GS power supplies. This 30V MOSFET is designed to maximize power conversion efficiency, providing a low • Includes SyncFET Schottky body diode R and low gate charge. The FDS6688S includes DS(ON) an integrated Schottky diode using Fairchild’s monolithic SyncFET technology. • High performance trench technology for extremely low R and fast switching DS(ON) Applications • High power and current handling capability • Synchronous Rectifier for DC/DC converter – • Notebook Vcore low side switch • 100% R (Gate Resistance) tested G • Point of Load low side switch D D 5 4 D D 6 3 7 2 G S 8 1 S SO-8 S o Absolute Maximum Ratings T =25 C unless otherwise noted A Symbol Parameter Ratings Units V Drain-Source Voltage 30 V DSS V Gate-Source Voltage V GSS ±20 I Drain Current – Continuous (Note 1a) 16 A D – Pulsed 50 P Power Dissipation for Single Operation (Note 1a) 2.5 W D (Note 1b) 1.2 (Note 1c) 1 T , T Operating and Storage Junction Temperature Range –55 to +125 J STG °C Thermal Characteristics R Thermal Resistance, Junction-to-Ambient (Note 1a) 50 °C/W θJA Thermal Resistance, Junction-to-Case (Note 1) 25 R θJC Package Marking and Ordering Information Device Marking Device Reel Size Tape width Quantity FDS6689S FDS6689S 13’’ 12mm 2500 units FDS6689S Rev B (W) ©2005
