FDS6688 ,30V N-Channel PowerTrench MOSFETFeatures This N-Channel MOSFET has been designed • 16 A, 30 V. R = 6 mΩ @ V = 10 V DS(ON) GSspecif ..
FDS6688_NL ,30V N-Channel PowerTrench MOSFETApplicationslow RDS(ON)• DC/DC converter• High power and current handling capabilityDD 5 4DDDD6 3DD ..
FDS6688S ,30V N-Channel PowerTrench SyncFETFDS6688S March 2004 FDS6688S ™30V N-Channel PowerTrench SyncFET
FDS6688S ,30V N-Channel PowerTrench SyncFETFeatures The FDS6688S is designed to replace a single SO-8 • 16 A, 30 V. R = 6.0 mΩ @ V = 10 V DS( ..
FDS6689S ,30V N-Channel PowerTrench SyncFETApplications • High power and current handling capability • Synchronous Rectifier for DC/DC convert ..
FDS6690 ,Single N-Channel Logic Level PWM Optimized PowerTrench?MOSFETFeatures10 A, 30 V. R = 0.0135 Ω @ V = 10 V DS(ON) GSThis N Channel Logic Level MOSFET has been ..
FQP8N60C ,600V N-Channel Advance Q-FET C-SeriesFQP8N60C/FQPF8N60C®QFETFQP8N60C/FQPF8N60C600V N-Channel MOSFET
FQP8N60C. ,600V N-Channel Advance Q-FET C-SeriesFeaturesThese N-Channel enhancement mode power field effect 7.5A, 600V, R = 1.2Ω @V = 10 VDS(on) ..
FQP8N80C ,800V N-Channel Advance Q-FET C-SeriesFQP8N80C/FQPF8N80CTMQFETFQP8N80C/FQPF8N80C800V N-Channel MOSFET
FQP8N80C ,800V N-Channel Advance Q-FET C-SeriesFeaturesThese N-Channel enhancement mode power field effect 8A, 800V, R = 1.55Ω @V = 10 VDS(on) G ..
FQP8N90C ,900V N-Channel Advance Q-FET C-SeriesFeaturesThese N-Channel enhancement mode power field effect • 6.3A, 900V, R = 1.9Ω @V = 10 VDS(on) ..
FQP8P10 ,100V P-Channel MOSFETapplications such as audio amplifier,high efficiency switching DC/DC converters, and DC motorcontro ..
FDS6688
30V N-Channel PowerTrench MOSFET
FDS6688 December 2001 FDS6688 30V N-Channel PowerTrench MOSFET General Description Features This N-Channel MOSFET has been designed • 16 A, 30 V. R = 6 mΩ @ V = 10 V DS(ON) GS specifically to improve the overall efficiency of DC/DC R = 7 mΩ @ V = 4.5 V DS(ON) GS converters using either synchronous or conventional switching PWM controllers. It has been optimized for • Ultra-low gate charge (40 nC typical) “low side” synchronous rectifier operation, providing an extremely low R in a small package. DS(ON) • High performance trench technology for extremely Applications low R DS(ON) • DC/DC converter • High power and current handling capability D D 5 4 D D DD 6 3 D D 7 2 SO-8 G G 8 1 S S S S S Pin 1SO-8 S o Absolute Maximum Ratings T =25 C unless otherwise noted A Symbol Parameter Ratings Units VDSS Drain-Source Voltage 30 V V Gate-Source Voltage V GSS ±16 I Drain Current – Continuous (Note 1a) 16 A D – Pulsed 50 P Power Dissipation for Single Operation (Note 1a) 2.5 W D (Note 1b) 1.4 (Note 1c) 1.2 T , T Operating and Storage Junction Temperature Range –55 to +175 °C J STG Thermal Characteristics R Thermal Resistance, Junction-to-Ambient (Note 1a) 50 °C/W θJA R Thermal Resistance, Junction-to-Ambient (Note 1c) 125 °C/W θJA Thermal Resistance, Junction-to-Case (Note 1) 25 R °C/W θJC Package Marking and Ordering Information Device Marking Device Reel Size Tape width Quantity FDS6688 FDS6688 13’’ 12mm 2500 units FDS6688 Rev C(W) 2001
