FDS6682 ,30V N-Channel PowerTrench MOSFETFeatures This N-Channel MOSFET has been designed • 14 A, 30 V. R = 7.5 mΩ @ V = 10 V DS(ON) GSspec ..
FDS6682_NL ,30V N-Channel PowerTrench MOSFETFeaturesThis N-Channel MOSFET has been designed• 14 A, 30 V. R = 7.5 mΩ @ V = 10 VDS(ON) GSspecifi ..
FDS6682_NL. ,30V N-Channel PowerTrench MOSFETFDS6682February 2004FDS6682Ò30V N-Channel PowerTrench MOSFET
FDS6682_NL.. ,30V N-Channel PowerTrench MOSFETApplications• High power and current handling capability• DC/DC converterDD5 4DD6 37 2GS8 1SSO-8SoA ..
FDS6685 ,30V P-Channel PowerTrench MOSFETFeatures This P-Channel MOSFET is a rugged gate version of • –8.8 A, –30 V R = 20 mΩ @ V = –10 V DS ..
FDS6688 ,30V N-Channel PowerTrench MOSFETFeatures This N-Channel MOSFET has been designed • 16 A, 30 V. R = 6 mΩ @ V = 10 V DS(ON) GSspecif ..
FQP7N65C ,650V N-Channel Advance Q-FET C-Series
FQP7N65C ,650V N-Channel Advance Q-FET C-Series
FQP7P06 ,60V P-Channel MOSFET
FQP7P06 ,60V P-Channel MOSFET
FQP85N06 ,60V N-Channel MOSFET
FQP85N06 ,60V N-Channel MOSFET
FDS6682
30V N-Channel PowerTrench MOSFET
FDS6682 December 2001 FDS6682 30V N-Channel PowerTrench MOSFET General Description Features This N-Channel MOSFET has been designed • 14 A, 30 V. R = 7.5 mΩ @ V = 10 V DS(ON) GS specifically to improve the overall efficiency of DC/DC R = 9.0 mΩ @ V = 4.5 V DS(ON) GS converters using either synchronous or conventional switching PWM controllers. It has been optimized for • Low gate charge (22 nC typical) “low side” synchronous rectifier operation, providing an extremely low R in a small package. DS(ON) • High performance trench technology for extremely low R DS(ON) Applications • High power and current handling capability • DC/DC converter D D 5 4 D D 6 3 7 2 G S 8 1 S SO-8 S o Absolute Maximum Ratings TA=25 C unless otherwise noted Symbol Parameter Ratings Units V Drain-Source Voltage 30 V DSS V Gate-Source Voltage ±16 V GSS I Drain Current – Continuous (Note 1a) 14 A D – Pulsed 50 Power Dissipation for Single Operation (Note 1a) 2.5 P W D (Note 1b) 1.2 (Note 1c) 1.0 T , T Operating and Storage Junction Temperature Range –55 to +150 J STG °C Thermal Characteristics Thermal Resistance, Junction-to-Ambient (Note 1a) 50 R °C/W θJA R Thermal Resistance, Junction-to-Case (Note 1) 25 °C/W θJC Package Marking and Ordering Information Device Marking Device Reel Size Tape width Quantity FDS6682 FDS6682 13’’ 12mm 2500 units FDS6682 Rev C (W) 2001
