FDS6680S_NL ,30V N-Channel PowerTrench SyncFETApplications• High power and current handling capability• DC/DC converter• Motor drivesDD5 4DD6 37 ..
FDS6681Z ,30 Volt P-Channel PowerTrench MOSFETFeatures This P-Channel MOSFET is produced using Fairchild • –20 A, –30 V. R = 4.6 mΩ @ V = –10 V D ..
FDS6681Z ,30 Volt P-Channel PowerTrench MOSFETapplications common in Notebook low R DS(ON)Computers and Portable Battery Packs. • High power and ..
FDS6681Z ,30 Volt P-Channel PowerTrench MOSFETElectrical Characteristics T = 25°C unless otherwise noted ASymbol Parameter Test Conditions MinTyp ..
FDS6682 ,30V N-Channel PowerTrench MOSFETFeatures This N-Channel MOSFET has been designed • 14 A, 30 V. R = 7.5 mΩ @ V = 10 V DS(ON) GSspec ..
FDS6682_NL ,30V N-Channel PowerTrench MOSFETFeaturesThis N-Channel MOSFET has been designed• 14 A, 30 V. R = 7.5 mΩ @ V = 10 VDS(ON) GSspecifi ..
FQP7N10 ,100V N-Channel MOSFET
FQP7N10L ,100V LOGIC N-Channel MOSFET
FQP7N20 ,200V N-Channel MOSFET
FQP7N20 ,200V N-Channel MOSFET
FQP7N20L ,200V LOGIC N-Channel MOSFET
FQP7N60 ,600V N-Channel MOSFET
FDS6680S_NL
30V N-Channel PowerTrench SyncFET
FDS6680S September 2000 FDS6680S ™ 30V N-Channel PowerTrench SyncFET General Description Features The FDS6680S is designed to replace a single SO-8 • 11.5 A, 30 V. R = 0.011 Ω @ V = 10 V DS(ON) GS MOSFET and Schottky diode in synchronous DC:DC R = 0.017 Ω @ V = 4.5 V DS(ON) GS power supplies. This 30V MOSFET is designed to maximize power conversion efficiency, providing a low • Includes SyncFET Schottky body diode R and low gate charge. The FDS6680S includes DS(ON) an integrated Schottky diode using Fairchild’s • Low gate charge (17nC typical) monolithic SyncFET technology. The performance of the FDS6680S as the low-side switch in a synchronous rectifier is indistinguishable from the performance of the • High performance trench technology for extremely low FDS6680 in parallel with a Schottky diode. R and fast switching DS(ON) Applications • High power and current handling capability • DC/DC converter • Motor drives D D 5 4 D D 6 3 7 2 G S 8 1 S SO-8 S o Absolute Maximum Ratings T =25 C unless otherwise noted A Symbol Parameter Ratings Units V Drain-Source Voltage 30 V DSS V Gate-Source Voltage V GSS ±20 I Drain Current – Continuous (Note 1a) 11.5 A D – Pulsed 50 P Power Dissipation for Single Operation (Note 1a) 2.5 W D (Note 1b) 1.2 (Note 1c) 1 T , T Operating and Storage Junction Temperature Range -55 to +150 °C J STG Thermal Characteristics Thermal Resistance, Junction-to-Ambient (Note 1a) 50 R °C/W θJA R Thermal Resistance, Junction-to-Case (Note 1) 25 °C/W θJC Package Marking and Ordering Information Device Marking Device Reel Size Tape width Quantity FDS6680S FDS6680S 13’’ 12mm 2500 units FDS6680S Rev C (W) 2000
