FDS6680A ,Single N-Channel, Logic Level, PowerTrench MOSFETFeaturesGeneralDescriptionMOSFE-Channel, Logic Level, PowerTrenchSingle NDS6680A O( TAV Vo oI C CΔ ..
FDS6680A_NL ,30V Single N-Channel, Logic Level, Power Trench MOSFETapplications where low in-line power low R DS(ON)loss and fast switching are required. • High powe ..
FDS6680AS ,30V N-Channel PowerTrench SyncFETGeneral Description 11.5 A, 30 V. R max = 8.0 mΩ @ V = 10 V The FDS6680AS is designed to replace ..
FDS6680AS_NL , 30V N-Channel PowerTrench SyncFET
FDS6680S ,30V N-Channel PowerTrench SyncFET TMFeaturesThe FDS6680S is designed to replace a single SO-8• 11.5 A, 30 V. R = 0.011 Ω @ V = 10 VDS(O ..
FDS6680S_NL ,30V N-Channel PowerTrench SyncFETApplications• High power and current handling capability• DC/DC converter• Motor drivesDD5 4DD6 37 ..
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FDS6680A
Single N-Channel, Logic Level, PowerTrench MOSFET
October 2001 F DS6680A Single N -Channel, Logic Level, PowerTrench MOSFET GeneralDescription Features This N-Channel Logic Level MOSFET is produced 12 .5 A, 3 0 V. R = 0.0095 W @ V = 10 V DS(ON ) GS using Fairchild Semiconductor 's advanced PowerTrench R = 0.013 W @ V = 4.5 V . DS(ON ) GS process that has been especially tailored to minimize Fast switching speed. the on-state resistance and yet maintain superior switching performance . Low gate charge. These devices are well suited for low voltage and battery powered applications where low in-line power loss and High performance trench technology for fast switching are required. extremely low R . DS(ON) High power and current handling capability. T M T M SOIC-16 SOT-23 SuperSOT -6 SO-8 SOT-223 SuperSOT -8 5 4 D D D 6 3 D 2 7 G S 8 1 SO-8 1 S S o Absolute Maximum Ratings T = 25 C unless other wise noted A Symbol Parameter F DS6680 A Units V Drain-Source Voltage 30 V DSS V Gate-Source Voltage ± 20 V GSS I Drain Current - Continuous (Note 1a) 12 .5 A D - Pulsed 50 P Power Dissipation for Single Operation (Note 1a) 2.5 W D (Note 1b) 1.2 (Note 1c) 1 T ,T Operating and Storage Temperature Range -55 to 150 °C J STG THERMAL CHARACTERISTICS R Thermal Resistance, Junction-to-Ambient (Note 1a ) 50 °C/W qJA Thermal Resistance, Junction-to-Case (Note 1) 25 °C/W R qJC FDS6680A Rev.E © 2001 FDS 6680A pin
