FDS6680A_NL ,30V Single N-Channel, Logic Level, Power Trench MOSFETapplications where low in-line power low R DS(ON)loss and fast switching are required. • High powe ..
FDS6680AS ,30V N-Channel PowerTrench SyncFETGeneral Description 11.5 A, 30 V. R max = 8.0 mΩ @ V = 10 V The FDS6680AS is designed to replace ..
FDS6680AS_NL , 30V N-Channel PowerTrench SyncFET
FDS6680S ,30V N-Channel PowerTrench SyncFET TMFeaturesThe FDS6680S is designed to replace a single SO-8• 11.5 A, 30 V. R = 0.011 Ω @ V = 10 VDS(O ..
FDS6680S_NL ,30V N-Channel PowerTrench SyncFETApplications• High power and current handling capability• DC/DC converter• Motor drivesDD5 4DD6 37 ..
FDS6681Z ,30 Volt P-Channel PowerTrench MOSFETFeatures This P-Channel MOSFET is produced using Fairchild • –20 A, –30 V. R = 4.6 mΩ @ V = –10 V D ..
FQP6N40CF ,N-Channel QFET?FRFET?MOSFET 400V, 6A, 1.1?
FQP6N40CF ,N-Channel QFET?FRFET?MOSFET 400V, 6A, 1.1?
FQP6N50 ,500V N-Channel MOSFET
FQP6N50C , 500V N-Channel MOSFET
FQP6N60C ,600V N-Channel Advance Q-FET C-Series
FQP6N60C ,600V N-Channel Advance Q-FET C-Series
FDS6680A_NL
30V Single N-Channel, Logic Level, Power Trench MOSFET
FDS6680A November 2004 FDS6680A ® Single N-Channel, Logic Level, PowerTrench MOSFET General Description Features This N-Channel Logic Level MOSFET is produced • 12.5 A, 30 V R = 9.5 mΩ @ V = 10 V DS(ON) GS using Fairchild Semiconductor’s advanced Power R = 13 mΩ @ V = 4.5 V DS(ON) GS Trench process that has been especially tailored to minimize the on-state resistance and yet maintain • Ultra-low gate charge superior switching performance. These devices are well suited for low voltage and • High performance trench technology for extremely battery powered applications where low in-line power low R DS(ON) loss and fast switching are required. • High power and current handling capability DD 5 4 DD DD 6 3 D D 7 2 SO-8 G G 8 1 S S S S S SO-8 Pin 1 S o Absolute Maximum Ratings T =25 C unless otherwise noted A Symbol Parameter Ratings Units V Drain-Source Voltage 30 V DSS V Gate-Source Voltage ±20 GSS I Drain Current – Continuous (Note 1a) 12.5 A D – Pulsed 50 Power Dissipation for Single Operation (Note 1a) 2.5 P W D (Note 1b) 1.2 (Note 1c) 1.0 T , T Operating and Storage Junction Temperature Range –55 to +150 J STG °C Thermal Characteristics R Thermal Resistance, Junction-to-Ambient (Note 1a) 50 °C/W θJA R Thermal Resistance, Junction-to-Ambient (Note 1) 25 θJC Package Marking and Ordering Information Device Marking Device Reel Size Tape width Quantity FDS6680A FDS6680A 13’’ 12mm 2500 units FDS6680A Rev F1(W) ©2004
