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FDS6679_NL
30 Volt P-Channel PowerTrench MOSFET
FDS6679 May 2001 FDS6679 Ò Ò 30 Volt P-Channel PowerTrench MOSFET General Description Features This P-Channel MOSFET has been designed · –13 A, –30 V. R = 9 mW @ V = –10 V DS(ON) GS specifically to improve the overall efficiency of DC/DC RDS(ON) = 13 mW @ V GS = – 4.5 V converters using either synchronous or conventional switching PWM controllers, and battery chargers. · Extended V range (±25V) for battery applications GSS These MOSFETs feature faster switching and lower gate charge than other MOSFETs with comparable · High performance trench technology for extremely RDS(ON) specifications. low R DS(ON) The result is a MOSFET that is easy and safer to drive · High power and current handling capability (even at very high frequencies), and DC/DC power supply designs with higher overall efficiency. D D 5 4 D D 6 3 7 2 G S 8 1 S SO-8 S o Absolute Maximum Ratings T =25 C unless otherwise noted A Symbol Parameter Ratings Units V Drain-Source Voltage –30 V DSS V Gate-Source Voltage V GSS ±25 ID Drain Current – Continuous (Note 1a) –13 A – Pulsed –50 P Power Dissipation for Single Operation (Note 1a) 2.5 W D (Note 1b) 1.2 (Note 1c) 1.0 T , T Operating and Storage Junction Temperature Range –55 to +175 J STG °C Thermal Characteristics Thermal Resistance, Junction-to-Ambient (Note 1a) 50 R °C/W qJA Thermal Resistance, Junction-to-Case (Note 1) 25 R °C/W qJC Package Marking and Ordering Information Device Marking Device Reel Size Tape width Quantity FDS6679 FDS6679 13’’ 12mm 2500 units FDS6679 Rev C (W) Ó2001
