FDS6678A ,30V N-Channel PowerTrench MOSFETApplications • Low gate charge (13 nC typical) • DC/DC converter • High power and current handling ..
FDS6679 ,30 Volt P-Channel PowerTrench MOSFETFeatures This P-Channel MOSFET has been designed • –13 A, –30 V. R = 9 mΩ @ V = –10 V DS(ON) GSspec ..
FDS6679_NL ,30 Volt P-Channel PowerTrench MOSFETapplications GSSThese MOSFETs feature faster switching and lower gate charge than other MOSFETs wit ..
FDS6679AZ ,-30V P-Channel PowerTrench?MOSFETFeaturesThis P-Channel MOSFET is producted using Fairchild Max r = 9.3mΩ at V = -10V, I = -13ADS( ..
FDS6679Z ,30 Volt P-Channel PowerTrench MOSFETFeatures This P-Channel MOSFET has been designed • –13 A, –30 V. R = 9 mΩ @ V = –10 V DS(ON) GSspec ..
FDS6679Z_NL ,30V P-Channel PowerTrench MOSFETapplications GSSThese MOSFETs feature faster switching and lower gate charge than other MOSFETs wit ..
FQP4N90 ,900V N-Channel MOSFET
FQP4N90 ,900V N-Channel MOSFET
FQP4P25 ,250V P-Channel MOSFET
FQP4P25 ,250V P-Channel MOSFET
FQP4P40 ,400V P-Channel MOSFET
FQP4P40 ,400V P-Channel MOSFET
FDS6678A
30V N-Channel PowerTrench MOSFET
FDS6678A April 2001 FDS6678A 30V N-Channel PowerTrench MOSFET General Description Features This N-Channel MOSFET has been designed • 7.5 A, 30 V. R = 24 mΩ @ V = 4.5 V DS(ON) GS specifically to improve the overall efficiency of DC/DC R = 20 mΩ @ V = 10 V DS(ON) GS converters using either synchronous or conventional switching PWM controllers. It has been optimized for • High performance trench technology for extremely low gate charge, low R and fast switching speed. DS(ON) low R DS(ON) Applications • Low gate charge (13 nC typical) • DC/DC converter • High power and current handling capability D D 5 4 D D 6 3 7 2 G S 8 1 S SO-8 S o Absolute Maximum Ratings T =25 C unless otherwise noted A Symbol Parameter Ratings Units V Drain-Source Voltage 30 V DSS V Gate-Source Voltage V GSS ±12 I Drain Current – Continuous (Note 1a) 7.5 A D – Pulsed 40 P Power Dissipation for Single Operation (Note 1a) 2.5 W D (Note 1b) 1.2 (Note 1c) 1.0 T , T Operating and Storage Junction Temperature Range -55 to +150 °C J STG Thermal Characteristics R Thermal Resistance, Junction-to-Ambient (Note 1a) 50 °C/W θJA R Thermal Resistance, Junction-to-Case (Note 1) 25 °C/W θJC Package Marking and Ordering Information Device Marking Device Reel Size Tape width Quantity FDS6678A FDS6678A 13’’ 12mm 2500 units FDS6678A Rev C(W) 2001
