FDS6676S ,30V N-Channel PowerTrench SyncFET TMFeatures The FDS6676S is designed to replace a single SO-8 • 14.5 A, 30 V. R typ 5.25 mΩ @ V = 10 ..
FDS6676S_NL ,30V N-Channel PowerTrench SyncFETApplications • High power and current handling capability• DC/DC converter • Motor drives DD5 4DD ..
FDS6678A ,30V N-Channel PowerTrench MOSFETApplications • Low gate charge (13 nC typical) • DC/DC converter • High power and current handling ..
FDS6679 ,30 Volt P-Channel PowerTrench MOSFETFeatures This P-Channel MOSFET has been designed • –13 A, –30 V. R = 9 mΩ @ V = –10 V DS(ON) GSspec ..
FDS6679_NL ,30 Volt P-Channel PowerTrench MOSFETapplications GSSThese MOSFETs feature faster switching and lower gate charge than other MOSFETs wit ..
FDS6679AZ ,-30V P-Channel PowerTrench?MOSFETFeaturesThis P-Channel MOSFET is producted using Fairchild Max r = 9.3mΩ at V = -10V, I = -13ADS( ..
FQP44N10F , 100V N-Channel MOSFET
FQP45N03L ,30V LOGIC N-Channel MOSFETFeaturesThese N-Channel enhancement mode power field effect • 45A, 30V, R = 0.018Ω @V = 10 VDS(on) ..
FQP45N15V2 ,150V N-Channel Advanced QFET V2 seriesFeaturesThese N-Channel enhancement mode power field effect 45A, 150V, R = 0.04Ω @V = 10 VDS(on) ..
FQP47P06 ,60V P-Channel MOSFETFQP47P06May 2001TMQFETFQP47P0660V P-Channel MOSFET
FQP4N20 ,200V N-Channel MOSFET
FQP4N20 ,200V N-Channel MOSFET
FDS6676AS
30V N-Channel PowerTrench SyncFET
® FDS6676AS 30V N-Channel PowerTrench SyncFET™ April 2005 FDS6676AS ® 30V N-Channel PowerTrench SyncFET™ Features General Description ■ 14.5 A, 30 V. R max= 6.0 mΩ @ V = 10 V The FDS6676AS is designed to replace a single SO-8 MOSFET DS(ON) GS R max= 7.25 mΩ @ V = 4.5 V and Schottky diode in synchronous DC:DC power supplies. DS(ON) GS This 30V MOSFET is designed to maximize power conversion ■ Includes SyncFET Schottky body diode efficiency, providing a low R and low gate charge. The DS(ON) ■ Low gate charge (45nC typical) FDS6676AS includes an integrated Schottky diode using Fair- ■ High performance trench technology for extremely low child’s monolithic SyncFET technology. R and fast switching DS(ON) ■ High power and current handling capability Applications ■ DC/DC converter ■ Low side notebook D 5 4 D D 6 3 D 7 2 G S 8 1 S SO-8 S Absolute Maximum Ratings T = 25°C unless otherwise noted A Symbol Parameter Ratings Units V Drain-Source Voltage 30 V DSS V Gate-Source Voltage ±20 V GSS I Drain Current – Continuous (Note 1a) 14.5 A D – Pulsed 50 P Power Dissipation for Single Operation (Note 1a) 2.5 W D (Note 1b) 1.2 (Note 1c) 1 T , T Operating and Storage Junction Temperature Range –55 to +150 °C J STG Thermal Characteristics R Thermal Resistance, Junction-to-Ambient (Note 1a) 50 °C/W θJA R Thermal Resistance, Junction-to-Case (Note 1) 25 °C/W θJC Package Marking and Ordering Information Device Marking Device Reel Size Tape width Quantity FDS6676AS FDS6676AS 13’’ 12mm 2500 units FDS6676AS FDS6676AS_NL (Note 3) 13’’ 12mm 2500 units ©2005 1 FDS6676AS Rev. A (X)
