FDS6676 ,30V N-Channel PowerTrench MOSFETFeatures This N-Channel MOSFET has been designed • 14.5 A, 30 V. R = 7 mΩ @ V = 10 V DS(ON) GSspec ..
FDS6676_NL ,30V N-Channel PowerTrench MOSFETApplications • Low gate charge (45 nC typ) • DC/DC converter • High power and current handling cap ..
FDS6676AS ,30V N-Channel PowerTrench SyncFETGeneral Description 14.5 A, 30 V. R max= 6.0 mΩ @ V = 10 V The FDS6676AS is designed to replace a ..
FDS6676S ,30V N-Channel PowerTrench SyncFET TMFeatures The FDS6676S is designed to replace a single SO-8 • 14.5 A, 30 V. R typ 5.25 mΩ @ V = 10 ..
FDS6676S_NL ,30V N-Channel PowerTrench SyncFETApplications • High power and current handling capability• DC/DC converter • Motor drives DD5 4DD ..
FDS6678A ,30V N-Channel PowerTrench MOSFETApplications • Low gate charge (13 nC typical) • DC/DC converter • High power and current handling ..
FQP3N80C ,800V N-Channel Advance Q-FET C-SeriesFeaturesThese N-Channel enhancement mode power field effect 3.0A, 800V, R = 4.8Ω @V = 10 VDS(on) ..
FQP3N90 ,900V N-Channel MOSFETFeaturesThese N-Channel enhancement mode power field effect 3.6A, 900V, R = 4.25 Ω @ V = 10 VDS(o ..
FQP3N90 ,900V N-Channel MOSFETSeptember 2000TMQFET QFET QFET QFETFQP3N90900V N-Channel MOSFET
FQP3P20 ,200V P-Channel MOSFETFeaturesThese P-Channel enhancement mode power field effect -2.8A, -200V, R = 2.7Ω @V = -10 VDS(o ..
FQP3P50 ,500V P-Channel MOSFETAugust 2000TMQFET QFET QFET QFETFQP3P50500V P-Channel MOSFET
FQP44N08 ,80V N-Channel MOSFETapplications such as automotive, highefficiency switching for DC/DC converters, and DC motorcontrol ..
FDS6676
30V N-Channel PowerTrench MOSFET
FDS6676 April 2001 FDS6676 30V N-Channel PowerTrench MOSFET General Description Features This N-Channel MOSFET has been designed • 14.5 A, 30 V. R = 7 mΩ @ V = 10 V DS(ON) GS specifically to improve the overall efficiency of DC/DC R = 8 mΩ @ V = 4.5 V DS(ON) GS converters using either synchronous or conventional switching PWM controllers. It has been optimized for • High performance trench technology for extremely low gate charge, low R and fast switching speed. DS(ON) low R DS(ON) Applications • Low gate charge (45 nC typ) • DC/DC converter • High power and current handling capability D D 5 4 D D 6 3 7 2 G S 8 1 S SO-8 S o Absolute Maximum Ratings T =25 C unless otherwise noted A Symbol Parameter Ratings Units V Drain-Source Voltage 30 V DSS V Gate-Source Voltage ± 16 V GSS I Drain Current – Continuous (Note 1a) 14.5 A D – Pulsed 50 Power Dissipation for Single Operation (Note 1a) 2.5 P W D (Note 1b) 1.2 (Note 1c) 1.0 TJ, TSTG Operating and Storage Junction Temperature Range –55 to +175 °C Thermal Characteristics R Thermal Resistance, Junction-to-Ambient (Note 1a) 50 °C/W θJA Thermal Resistance, Junction-to-Ambient (Note 1c) 125 R °C/W θJA R Thermal Resistance, Junction-to-Case (Note 1) 25 °C/W θJC Package Marking and Ordering Information Device Marking Device Reel Size Tape width Quantity FDS6676 FDS6676 13’’ 12mm 2500 units FDS6676 Rev C(W) 2001
