FDS6675BZ ,-30V P-Channel PowerTrench?MOSFETFeatures Max r = 13mΩ at V = -10V, I = -11AThis P-Channel MOSFET is producted using Fairchild DS(o ..
FDS6676 ,30V N-Channel PowerTrench MOSFETFeatures This N-Channel MOSFET has been designed • 14.5 A, 30 V. R = 7 mΩ @ V = 10 V DS(ON) GSspec ..
FDS6676_NL ,30V N-Channel PowerTrench MOSFETApplications • Low gate charge (45 nC typ) • DC/DC converter • High power and current handling cap ..
FDS6676AS ,30V N-Channel PowerTrench SyncFETGeneral Description 14.5 A, 30 V. R max= 6.0 mΩ @ V = 10 V The FDS6676AS is designed to replace a ..
FDS6676S ,30V N-Channel PowerTrench SyncFET TMFeatures The FDS6676S is designed to replace a single SO-8 • 14.5 A, 30 V. R typ 5.25 mΩ @ V = 10 ..
FDS6676S_NL ,30V N-Channel PowerTrench SyncFETApplications • High power and current handling capability• DC/DC converter • Motor drives DD5 4DD ..
FQP3N50C ,N-Channel QFET?MOSFETFeatures Description• 3 A, 500 V, R = 2.5 Ω @ V = 10 V These N-Channel enhancement mode power field ..
FQP3N60 ,600V N-Channel MOSFETFeaturesThese N-Channel enhancement mode power field effect 3.0A, 600V, R = 3.6Ω @V = 10 VDS(on) ..
FQP3N60C ,N-Channel QFET?MOSFET 600V,3A, 3.4?FeaturesThis N-Channel enhancement mode power MOSFET is ®produced using Fairchild Semiconductor ’s ..
FQP3N60C ,N-Channel QFET?MOSFET 600V,3A, 3.4?FQP3N60C N-Channel MOSFET March 2013FQP3N60C N-Channel QFET MOSFET 600 V, 3.0 A, 3.4 Ω Description
FQP3N80 ,800V N-Channel MOSFETSeptember 2000TMQFETFQP3N80800V N-Channel MOSFET
FQP3N80 ,800V N-Channel MOSFETFeaturesThese N-Channel enhancement mode power field effect 3.0A, 800V, R = 5.0Ω @V = 10 VDS(on) ..
FDS6675BZ
-30V P-Channel PowerTrench?MOSFET
® FDS6675BZ P-Channel PowerTrench MOSFET March 2009 FDS6675BZ ® tm P-Channel PowerTrench MOSFET -30V, -11A, 13mΩ General Description Features Max r = 13mΩ at V = -10V, I = -11A This P-Channel MOSFET is producted using Fairchild DS(on) GS D Semiconductor’s advanced PowerTrench process that has Max r = 21.8mΩ at V = -4.5V, I = -9A DS(on) GS D been especially tailored to minimize the on-state resistance. Extended V range (-25V) for battery applications GS This device is well suited for Power Management and load HBM ESD protection level of 5.4 KV typical (note 3) switching applications common in Notebook Computers and Portable Battery Packs. High performance trench technology for extremely low r DS(on) High power and current handing capability RoHS Compliant D D 5 4 D D 6 3 7 2 G S S 8 1 SO-8 S MOSFET Maximum Ratings T = 25°C unless otherwise noted A Symbol Parameter Ratings Units V Drain to Source Voltage -30 V DS V Gate to Source Voltage ±25 V GS Drain Current -Continuous (Note 1a) -11 I A D -Pulsed -55 Power Dissipation for Single Operation (Note 1a) 2.5 P (Note 1b) 1.2 W D (Note 1c) 1.0 T , T Operating and Storage Temperature -55 to 150 °C J STG Thermal Characteristics R Thermal Resistance , Junction to Ambient (Note 1a) 50 °C/W θJA R Thermal Resistance , Junction to Case (Note 1) 25 °C/W θJC Package Marking and Ordering Information Device Marking Device Reel Size Tape Width Quantity FDS6675BZ FDS6675BZ 13’’ 12mm 2500 units ©2009 1 FDS6675BZ Rev. B2
