FDS6675A_NL ,30V P-Channel PowerTrench MOSFETFeatures This P-Channel MOSFET is a rugged gate version of • –11 A, –30 V R = 13 mΩ @ V = –10 V DS( ..
FDS6675BZ ,-30V P-Channel PowerTrench?MOSFETFeatures Max r = 13mΩ at V = -10V, I = -11AThis P-Channel MOSFET is producted using Fairchild DS(o ..
FDS6676 ,30V N-Channel PowerTrench MOSFETFeatures This N-Channel MOSFET has been designed • 14.5 A, 30 V. R = 7 mΩ @ V = 10 V DS(ON) GSspec ..
FDS6676_NL ,30V N-Channel PowerTrench MOSFETApplications • Low gate charge (45 nC typ) • DC/DC converter • High power and current handling cap ..
FDS6676AS ,30V N-Channel PowerTrench SyncFETGeneral Description 14.5 A, 30 V. R max= 6.0 mΩ @ V = 10 V The FDS6676AS is designed to replace a ..
FDS6676S ,30V N-Channel PowerTrench SyncFET TMFeatures The FDS6676S is designed to replace a single SO-8 • 14.5 A, 30 V. R typ 5.25 mΩ @ V = 10 ..
FQP34N20L ,200V LOGIC N-Channel MOSFETFeaturesThese N-Channel enhancement mode power field effect • 31A, 200V, R = 0.075Ω @V = 10 VDS(on) ..
FQP34N20L ,200V LOGIC N-Channel MOSFETJune 2000TMQFET QFET QFET QFETFQP34N20L200V LOGIC N-Channel MOSFET
FQP3N25 ,250V N-Channel MOSFETFeaturesThese N-Channel enhancement mode power field effect 2.8A, 250V, R = 2.2Ω @V = 10 VDS(on) ..
FQP3N40 ,400V N-Channel MOSFET
FQP3N50C ,N-Channel QFET?MOSFETFeatures Description• 3 A, 500 V, R = 2.5 Ω @ V = 10 V These N-Channel enhancement mode power field ..
FQP3N60 ,600V N-Channel MOSFETFeaturesThese N-Channel enhancement mode power field effect 3.0A, 600V, R = 3.6Ω @V = 10 VDS(on) ..
FDS6675A-FDS6675A_NL
30V P-Channel PowerTrench MOSFET
FDS6675A February 2003 FDS6675A 30V P-Channel PowerTrench MOSFET General Description Features This P-Channel MOSFET is a rugged gate version of • –11 A, –30 V R = 13 mΩ @ V = –10 V DS(ON) GS Fairchild Semiconductor’s advanced PowerTrench R = 19 mΩ @ V = –4.5 V DS(ON) GS process. It has been optimized for power management applications requiring a wide range of gate drive voltage • Low gate charge ratings (4.5V – 25V). • Fast switching speed Applications • Power management • High performance trench technology for extremely low R DS(ON) • Load switch • Battery protection • High power and current handling capability D D 5 4 D D DD 6 3 D D 7 2 SO-8 G G 8 1 S S S S S Pin 1 SO-8 S o Absolute Maximum Ratings T =25 C unless otherwise noted A Symbol Parameter Ratings Units V Drain-Source Voltage –30 V DSS V Gate-Source Voltage V GSS ±25 I Drain Current – Continuous (Note 1a) –11 A D – Pulsed –50 P Power Dissipation for Single Operation (Note 1a) 2.5 W D (Note 1b) 1.2 (Note 1c) 1 T , T Operating and Storage Junction Temperature Range –55 to +175 °C J STG Thermal Characteristics R Thermal Resistance, Junction-to-Ambient (Note 1a) 50 °C/W θJA Thermal Resistance, Junction-to-Ambient (Note 1c) 125 R °C/W θJA Thermal Resistance, Junction-to-Case (Note 1) 25 R °C/W θJC Package Marking and Ordering Information Device Marking Device Reel Size Tape width Quantity FDS6675A FDS6675A 13’’ 12mm 2500 units FDS6675A Rev C (W) 2003
