FDS6673BZ_F085 ,-30V P-Channel PowerTrench?MOSFETapplications common in Notebook High performance trench technology for extremely low Computers and ..
FDS6675 ,Single P-Channel, Logic Level, PowerTrench TM MOSFETFeaturesThis P-Channel Logic Level MOSFET is produced A, -30 V. R = 0.014 Ω @ V = -10 V, ..
FDS6675_NL ,Single P-Channel Logic Level PowerTrench MOSFETapplications: load switching and power management,battery charging circuits,T M T MD54DDFDS 63D72GS ..
FDS6675A ,30V P-Channel PowerTrench MOSFETFDS6675A February 2003 FDS6675A 30V P-Channel PowerTrench MOSFET
FDS6675A ,30V P-Channel PowerTrench MOSFETapplications requiring a wide range of gate drive voltage • Low gate charge ratings (4.5V – 25V). ..
FDS6675A ,30V P-Channel PowerTrench MOSFETApplications • Power management • High performance trench technology for extremely low R DS(ON)• ..
FQP2P25 ,250V P-Channel MOSFETFeaturesThese P-Channel enhancement mode power field effect -2.3A, -250V, R = 4.0Ω @V = -10 VDS(o ..
FQP2P40 ,400V P-Channel MOSFETFQP2P40December 2000TMQFET QFET QFET QFETFQP2P40400V P-Channel MOSFET
FQP30N06 ,60V N-Channel MOSFETFQP30N06May 2001TMQFETFQP30N0660V N-Channel MOSFET
FQP30N06L ,60V LOGIC N-Channel MOSFETapplications such as automotive, DC/DC converters, and high efficiency switching for powermanagemen ..
FQP30N06L ,60V LOGIC N-Channel MOSFETFeaturesThese N-Channel enhancement mode power field effect • 32A, 60V, R = 0.035Ω @V = 10 VDS(on) ..
FQP32N12V2 ,120V N-Channel Advanced QFET V2 seriesFeaturesThese N-Channel enhancement mode power field effect • 32 A, 120V, R = 0.05Ω @V = 10 VDS(on) ..
FDS6673BZ_F085
-30V P-Channel PowerTrench?MOSFET
® FDS6673BZ_F085 P-Channel PowerTrench MOSFET July 2009 FDS6673BZ_F085 ® P-Channel PowerTrench MOSFET -30V, -14.5A, 7.8mΩ General Description Features This P-Channel MOSFET is produced using Fairchild Max r = 7.8mΩ, V = -10V, I = -14.5A DS(on) GS D Semiconductor’s advanced Power Trench process that Max r = 12mΩ, V = -4.5V, I = -12A DS(on) GS D has been especially tailored to minimize the on-state Extended V range (-25V) for battery applications GS resistance. This device is well suited for Power Management and HBM ESD protection level of 6.5kV typical (note 3) load switching applications common in Notebook High performance trench technology for extremely low Computers and Portable Battery Packs. r DS(on) High power and current handling capability RoHS compliant Qualified to AEC Q101 D D 5 4 D D 6 3 7 2 G S S 8 1 SO-8 S MOSFET Maximum Ratings T = 25°C unless otherwise noted A Symbol Parameter Ratings Units V Drain to Source Voltage -30 V DS V Gate to Source Voltage ±25 V GS Drain Current -Continuous (Note1a) -14.5 A I D -Pulsed -75 A Power Dissipation for Single Operation (Note1a) 2.5 P (Note1b) 1.2 W D (Note1c) 1.0 T , T Operating and Storage Temperature -55 to 150 °C J STG Thermal Characteristics R Thermal Resistance , Junction to Ambient (Note 1a) 50 °C/W θJA R Thermal Resistance , Junction to Case (Note 1) 25 °C/W θJC Package Marking and Ordering Information Device Marking Device Reel Size Tape Width Quantity FDS6673BZ FDS6673BZ_F085 13’’ 12mm 2500 units ©2009 1 FDS6673BZ_F085 Rev. A
