FDS6673AZ ,30V P-Channel PowerTrench MOSFETFeatures This P-Channel MOSFET has been designed • –14.5 A, –30 V. R = 7.2 mΩ @ V = –10 V DS(ON) GS ..
FDS6673BZ ,-30V P-Channel PowerTrench?MOSFETFeaturesThis P-Channel MOSFET is produced using Fairchild Max r = 7.8m: V = -10V, I = -14.5A ..
FDS6673BZ_F085 ,-30V P-Channel PowerTrench?MOSFETapplications common in Notebook High performance trench technology for extremely low Computers and ..
FDS6675 ,Single P-Channel, Logic Level, PowerTrench TM MOSFETFeaturesThis P-Channel Logic Level MOSFET is produced A, -30 V. R = 0.014 Ω @ V = -10 V, ..
FDS6675_NL ,Single P-Channel Logic Level PowerTrench MOSFETapplications: load switching and power management,battery charging circuits,T M T MD54DDFDS 63D72GS ..
FDS6675A ,30V P-Channel PowerTrench MOSFETFDS6675A February 2003 FDS6675A 30V P-Channel PowerTrench MOSFET
FQP2N80 ,800V N-Channel MOSFETSeptember 2000TMQFETFQP2N80800V N-Channel MOSFET
FQP2NA90 ,900V N-Channel MOSFETFeaturesThese N-Channel enhancement mode power field effect 2.8A, 900V, R = 5.8 Ω @ V = 10 VDS(on ..
FQP2NA90 ,900V N-Channel MOSFETSeptember 2000TMQFET QFET QFET QFETFQP2NA90900V N-Channel MOSFET
FQP2P25 ,250V P-Channel MOSFETFeaturesThese P-Channel enhancement mode power field effect -2.3A, -250V, R = 4.0Ω @V = -10 VDS(o ..
FQP2P40 ,400V P-Channel MOSFETFQP2P40December 2000TMQFET QFET QFET QFETFQP2P40400V P-Channel MOSFET
FQP30N06 ,60V N-Channel MOSFETFQP30N06May 2001TMQFETFQP30N0660V N-Channel MOSFET
FDS6673AZ
30V P-Channel PowerTrench MOSFET
FDS6673AZ January 2005 FDS6673AZ 30 Volt P-Channel PowerTrench MOSFET General Description Features This P-Channel MOSFET has been designed • –14.5 A, –30 V. R = 7.2 mΩ @ V = –10 V DS(ON) GS specifically to improve the overall efficiency of DC/DC R = 11 mΩ @ V = – 4.5 V DS(ON) GS converters using either synchronous or conventional switching PWM controllers, and battery chargers. • Extended V range (–25V) for battery applications GSS These MOSFETs feature faster switching and lower gate charge than other MOSFETs with comparable • ESD protection diode (note 3) R specifications. DS(ON) • High performance trench technology for extremely The result is a MOSFET that is easy and safer to drive low R DS(ON) (even at very high frequencies), and DC/DC power supply designs with higher overall efficiency. • High power and current handling capability D D 5 4 D D 6 3 7 2 G S S 8 1 SO-8 S o Absolute Maximum Ratings T =25 C unless otherwise noted A Symbol Parameter Ratings Units V Drain-Source Voltage –30 V DSS V Gate-Source Voltage +25 V GSS I Drain Current – Continuous (Note 1a) –14.5 A D – Pulsed –50 P Power Dissipation for Single Operation (Note 1a) 2.5 W D (Note 1b) 1.2 (Note 1c) 1.0 T , T Operating and Storage Junction Temperature Range –55 to +175 °C J STG Thermal Characteristics R Thermal Resistance, Junction-to-Ambient (Note 1a) 50 °C/W θJA Thermal Resistance, Junction-to-Case (Note 1) 25 R °C/W θJC Package Marking and Ordering Information Device Marking Device Reel Size Tape width Quantity FDS6673AZ FDS6673AZ 13’’ 12mm 2500 units FDS6673AZ Rev C (W) 2005
