FDS6670S ,30V N-Channel PowerTrench SyncFET TMFeatures The FDS6670S is designed to replace a single SO-8 • 13.5 A, 30 V. R = 9 mΩ @ V = 10 V DS( ..
FDS6672 ,30V N-Channel PowerTrench MOSFETApplications• Low gate charge (33 nC typical)• DC/DC converter• High power and current handling cap ..
FDS6672A ,30V N-Channel PowerTrench MOSFETFeatures This N-Channel MOSFET has been designed • 12.5 A, 30 V. R = 8 mΩ @ V = 10 V DS(ON) GSspec ..
FDS6672A_NL ,30V N-Channel PowerTrench MOSFETApplications • Low gate charge (33 nC typical) • DC/DC converter • High power and current handling ..
FDS6673AZ ,30V P-Channel PowerTrench MOSFETFeatures This P-Channel MOSFET has been designed • –14.5 A, –30 V. R = 7.2 mΩ @ V = –10 V DS(ON) GS ..
FDS6673BZ ,-30V P-Channel PowerTrench?MOSFETFeaturesThis P-Channel MOSFET is produced using Fairchild Max r = 7.8m: V = -10V, I = -14.5A ..
FQP20N06L ,60V LOGIC N-Channel MOSFETapplications such as automotive, DC/DC converters, and high efficiency switching for powermanagemen ..
FQP22N30 ,300V N-Channel MOSFET
FQP22N30 ,300V N-Channel MOSFET
FQP22P10 ,100V P-Channel MOSFETapplications such as audio amplifier,high efficiency switching DC/DC converters, and DC motorcontro ..
FQP24N08 ,80V N-Channel MOSFETFeaturesThese N-Channel enhancement mode power field effect 24A, 80V, R = 0.06Ω @V = 10 VDS(on) G ..
FQP24N08 ,80V N-Channel MOSFETapplications such as automotive, highefficiency switching for DC/DC converters, and DC motorcontrol ..
FDS6670S
30V N-Channel PowerTrench SyncFET TM
FDS6670S August 2001 FDS6670S Ò ™ 30V N-Channel PowerTrench SyncFET General Description Features The FDS6670S is designed to replace a single SO-8 · 13.5 A, 30 V. R = 9 mW @ V = 10 V DS(ON) GS MOSFET and Schottky diode in synchronous DC:DC R = 12.5 mW @ V = 4.5 V DS(ON) GS power supplies. This 30V MOSFET is designed to maximize power conversion efficiency, providing a low · Includes SyncFET Schottky body diode R and low gate charge. The FDS6670S includes DS(ON) an integrated Schottky diode using Fairchild’s monolithic SyncFET technology. · Low gate charge (24nC typical) · High performance trench technology for extremely low R and fast switching DS(ON) Applications · High power and current handling capability · DC/DC converter · Motor drives D D 5 4 D D 6 3 7 2 G S 8 1 S SO-8 S o Absolute Maximum Ratings T =25 C unless otherwise noted A Symbol Parameter Ratings Units V Drain-Source Voltage 30 V DSS V Gate-Source Voltage V GSS ±20 I Drain Current – Continuous (Note 1a) 13.5 A D – Pulsed 50 P Power Dissipation for Single Operation (Note 1a) 2.5 W D (Note 1b) 1.2 (Note 1c) 1 T , T Operating and Storage Junction Temperature Range –55 to +150 J STG °C Thermal Characteristics R Thermal Resistance, Junction-to-Ambient (Note 1a) 50 °C/W qJA Thermal Resistance, Junction-to-Case (Note 1) 25 R °C/W qJC Package Marking and Ordering Information Device Marking Device Reel Size Tape width Quantity FDS6670S FDS6670S 13’’ 12mm 2500 units FDS6670S Rev E (W) Ó2001
