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FDS6670AS
FDS6670AS
30V N-Channel PowerTrench�
SyncFET™
General Description The FDS6670AS is designed to replace a single SO-8
MOSFET and Schottky diode in synchronous DC:DC
power supplies. This 30V MOSFET is designed to
maximize power conversion efficiency, providing a low
RDS(ON) and low gate charge. The FDS6670AS
includes an integrated Schottky diode using Fairchild’s
monolithic SyncFET technology.
Applications DC/DC converter Low side notebook
Features 13.5 A, 30 V. RDS(ON) max= 9.0 m� @ VGS = 10 V
RDS(ON) max= 11.5 m� @ VGS = 4.5 V Includes SyncFET Schottky body diode Low gate charge (27nC typical) High performance trench technology for extremely low
RDS(ON) and fast switching High power and current handling capability
SSO-8
Absolute Maximum Ratings TA=25o C unless otherwise noted
Symbol Parameter Ratings UnitsVDSS Drain-Source Voltage 30 V
VGSS Gate-Source Voltage �20 V Drain Current – Continuous (Note 1a) 13.5 A – Pulsed 50
Power Dissipation for Single Operation (Note 1a) 2.5
(Note 1b) 1.2
(Note 1c) 1
TJ, TSTG Operating and Storage Junction Temperature Range –55 to +150 �C
Thermal Characteristics R�JA Thermal Resistance, Junction-to-Ambient (Note 1a) 50 �C/W
R�JC Thermal Resistance, Junction-to-Case (Note 1) 25 �C/W
Package Marking and Ordering Information
Device Marking Device Reel Size Tape width Quantity FDS6670AS FDS6670AS 13’’ 12mm 2500 units
S66
0AS 30V N-Channel P
werT
renc
SyncFET™� RoHS Compliant
©2010
FDS6670AS Rev.C1
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