FDS6576 ,P-Channel 2.5V Specified PowerTrench MOSFETFeatures This P-Channel 2.5V specified MOSFET is in a rugged –11 A, –20 V. R = 0.014 Ω @ V = –4.5 V ..
FDS6576_NL ,P-Channel 2.5V Specified PowerTrench MOSFETApplications • Load switch • Fast switching speed. • Battery protection • High performance tren ..
FDS6609A ,P-Channel Logic Level PowerTrench MOSFETFeaturesThis P-Channel Logic Level MOSFET is produced• –6.3 A, –30 V. R = 0.032 Ω =@ V = -10 VDS(O ..
FDS6612A ,Single N-Channel, Logic Level, PowerTrench TM MOSFETFeaturesDescriptionGeneral MOSFET-Channel, Logic Level, PowerTrenchSingle NDS6612O( TAV Vo oI C CΔ ..
FDS6612A_NL ,Single N-Channel, Logic Level, Power Trench MOSFETFeaturesThis N-Channel Logic Level MOSFET is produced• 8.4 A, 30 V. R = 22 mΩ @ V = 10 VDS(ON) GSu ..
FDS6614A ,N-Channel Logic Level PowerTrench MOSFET , $-. ..
FQN1N60C ,N-Channel QFET?MOSFET 600V, 0.3A, 11.5?Features• 0.30 A, 600 V, R = 11.5 Ω (Max) @V = 10 V, ID = 0.14 AThis N-Channel enhancement mode pow ..
FQNL1N50B ,500V N-Channel MOSFETFeaturesThese N-Channel enhancement mode power field effect • 0.27A, 500V, R = 9.0Ω @V = 10 VDS(on) ..
FQP10N20C ,200V N-Channel Advance Q-FET C-SeriesFeaturesThese N-Channel enhancement mode power field effect 9.5A, 200V, R = 0.36Ω @V = 10 VDS(on) ..
FQP10N20C ,200V N-Channel Advance Q-FET C-SeriesFeaturesThese N-Channel enhancement mode power field effect 9.5A, 200V, R = 0.36Ω @V = 10 VDS(on) ..
FQP10N20C ,200V N-Channel Advance Q-FET C-SeriesFQP10N20C/FQPF10N20CTMQFETFQP10N20C/FQPF10N20C200V N-Channel MOSFET
FQP10N20C ,200V N-Channel Advance Q-FET C-SeriesFeaturesThese N-Channel enhancement mode power field effect 9.5A, 200V, R = 0.36Ω @V = 10 VDS(on) ..
FDS6576
P-Channel 2.5V Specified PowerTrench MOSFET
FDS6576 January 2001 FDS6576 P-Channel 2.5V Specified PowerTrench MOSFET General Description Features This P-Channel 2.5V specified MOSFET is in a rugged –11 A, –20 V. R = 0.014 Ω @ V = –4.5 V DS(ON) GS gate version of Fairchild Semiconductor's advanced PowerTrench process. It has been optimized for power R = 0.020 Ω @ V = –2.5 V DS(ON) GS management applications with a wide range of gate drive voltage (2.5V - 12V). • Extended V range (±12V) for battery applications. GSS • Low gate charge (43nC typical). Applications • Load switch • Fast switching speed. • Battery protection • High performance trench technology for extremely • Power management low R . DS(ON) • High power and current handling capability. D D 5 4 D D 6 3 7 2 G S 8 1 S SO-8 S o Absolute Maximum Ratings T =25 C unless otherwise noted A Symbol Parameter Ratings Units V Drain-Source Voltage –20 V DSS V Gate-Source Voltage V GSS ± 12 I Drain Current – Continuous (Note 1a) –11 A D – Pulsed –50 P Power Dissipation for Single Operation (Note 1a) 2.5 W D (Note 1b) 1.2 (Note 1c) 1.0 T , T Operating and Storage Junction Temperature Range –55 to +150 °C J STG Thermal Characteristics R Thermal Resistance, Junction-to-Ambient (Note 1a) 50 °C/W θJA R Thermal Resistance, Junction-to-Ambient (Note 1c) 125 °C/W θJA Thermal Resistance, Junction-to-Case (Note 1) 25 R °C/W θJC Package Marking and Ordering Information Device Marking Device Reel Size Tape width Quantity FDS6576 FDS6576 13’’ 12mm 2500 units FDS6576 Rev E(W) 2001
