FDS6575_NL ,Single P-Channel Logic Level PowerTrench MOSFETApplications low R DS(ON)• Power management • High current and power handling capability • Load sw ..
FDS6576 ,P-Channel 2.5V Specified PowerTrench MOSFETFeatures This P-Channel 2.5V specified MOSFET is in a rugged –11 A, –20 V. R = 0.014 Ω @ V = –4.5 V ..
FDS6576_NL ,P-Channel 2.5V Specified PowerTrench MOSFETApplications • Load switch • Fast switching speed. • Battery protection • High performance tren ..
FDS6609A ,P-Channel Logic Level PowerTrench MOSFETFeaturesThis P-Channel Logic Level MOSFET is produced• –6.3 A, –30 V. R = 0.032 Ω =@ V = -10 VDS(O ..
FDS6612A ,Single N-Channel, Logic Level, PowerTrench TM MOSFETFeaturesDescriptionGeneral MOSFET-Channel, Logic Level, PowerTrenchSingle NDS6612O( TAV Vo oI C CΔ ..
FDS6612A_NL ,Single N-Channel, Logic Level, Power Trench MOSFETFeaturesThis N-Channel Logic Level MOSFET is produced• 8.4 A, 30 V. R = 22 mΩ @ V = 10 VDS(ON) GSu ..
FQN1N60C ,N-Channel QFET?MOSFET 600V, 0.3A, 11.5?Features• 0.30 A, 600 V, R = 11.5 Ω (Max) @V = 10 V, ID = 0.14 AThis N-Channel enhancement mode pow ..
FQNL1N50B ,500V N-Channel MOSFETFeaturesThese N-Channel enhancement mode power field effect • 0.27A, 500V, R = 9.0Ω @V = 10 VDS(on) ..
FQP10N20C ,200V N-Channel Advance Q-FET C-SeriesFeaturesThese N-Channel enhancement mode power field effect 9.5A, 200V, R = 0.36Ω @V = 10 VDS(on) ..
FQP10N20C ,200V N-Channel Advance Q-FET C-SeriesFeaturesThese N-Channel enhancement mode power field effect 9.5A, 200V, R = 0.36Ω @V = 10 VDS(on) ..
FQP10N20C ,200V N-Channel Advance Q-FET C-SeriesFQP10N20C/FQPF10N20CTMQFETFQP10N20C/FQPF10N20C200V N-Channel MOSFET
FQP10N20C ,200V N-Channel Advance Q-FET C-SeriesFeaturesThese N-Channel enhancement mode power field effect 9.5A, 200V, R = 0.36Ω @V = 10 VDS(on) ..
FDS6575_NL
Single P-Channel Logic Level PowerTrench MOSFET
FDS6575 September 2001 FDS6575 Ò Ò P-Channel 2.5V Specified PowerTrench MOSFET General Description Features This P -Channel 2.5V specified MOSFET is a rugged · –10 A, –20 V. R = 13 mW @ V = –4.5 V DS(ON) GS gate version of Fairchild Semiconductor’s advanced RDS(ON) = 17 mW @ V GS = –2.5 V PowerTrench process. It has been optimized for power management applications with a wide range of gate · Low gate charge drive voltage (2.5V – 8V). · High performance trench technology for extremely Applications low R DS(ON) · Power management · High current and power handling capability · Load switch · Battery protection D D 5 4 D D D D 6 3 D D 7 2 G SO-8 G 8 1 S S S S S Pin 1SO-8 S o Absolute Maximum Ratings TA=25 C unless otherwise noted Symbol Parameter Ratings Units V Drain-Source Voltage –20 V DSS V Gate-Source Voltage ±8 V GSS ID Drain Current – Continuous (Note 1a) –10 A – Pulsed –50 P Power Dissipation for Single Operation (Note 1a) 2.5 W D (Note 1b) 1.5 (Note 1c) 1.2 T , T Operating and Storage Junction Temperature Range –55 to +175 °C J STG Thermal Characteristics Thermal Resistance, Junction-to-Ambient (Note 1a) 50 RqJA °C/W R Thermal Resistance, Junction-to-Ambient (Note 1c) 125 °C/W qJA Thermal Resistance, Junction-to-Case (Note 1) 25 R °C/W qJC Package Marking and Ordering Information Device Marking Device Reel Size Tape width Quantity FDS6575 FDS6575 13’’ 12mm 2500 units Ó2001 FDS6575 Rev F(W)
