FDS6574A_NL ,20V N-Channel PowerTrench MOSFETApplications • High performance trench technology for extremely • DC/DC converter low R DS(ON)• ..
FDS6575 ,P-Channel 2.5V Specified PowerTrench MOSFETFeatures This P -Channel 2.5V specified MOSFET is a rugged • –10 A, –20 V. R = 13 mΩ @ V = –4.5 V D ..
FDS6575_NL ,Single P-Channel Logic Level PowerTrench MOSFETApplications low R DS(ON)• Power management • High current and power handling capability • Load sw ..
FDS6576 ,P-Channel 2.5V Specified PowerTrench MOSFETFeatures This P-Channel 2.5V specified MOSFET is in a rugged –11 A, –20 V. R = 0.014 Ω @ V = –4.5 V ..
FDS6576_NL ,P-Channel 2.5V Specified PowerTrench MOSFETApplications • Load switch • Fast switching speed. • Battery protection • High performance tren ..
FDS6609A ,P-Channel Logic Level PowerTrench MOSFETFeaturesThis P-Channel Logic Level MOSFET is produced• –6.3 A, –30 V. R = 0.032 Ω =@ V = -10 VDS(O ..
FQL40N50 ,500V N-Channel MOSFETFQL40N50May 2001TMQFETFQL40N50500V N-Channel MOSFET
FQN1N60C ,N-Channel QFET?MOSFET 600V, 0.3A, 11.5?Features• 0.30 A, 600 V, R = 11.5 Ω (Max) @V = 10 V, ID = 0.14 AThis N-Channel enhancement mode pow ..
FQNL1N50B ,500V N-Channel MOSFETFeaturesThese N-Channel enhancement mode power field effect • 0.27A, 500V, R = 9.0Ω @V = 10 VDS(on) ..
FQP10N20C ,200V N-Channel Advance Q-FET C-SeriesFeaturesThese N-Channel enhancement mode power field effect 9.5A, 200V, R = 0.36Ω @V = 10 VDS(on) ..
FQP10N20C ,200V N-Channel Advance Q-FET C-SeriesFeaturesThese N-Channel enhancement mode power field effect 9.5A, 200V, R = 0.36Ω @V = 10 VDS(on) ..
FQP10N20C ,200V N-Channel Advance Q-FET C-SeriesFQP10N20C/FQPF10N20CTMQFETFQP10N20C/FQPF10N20C200V N-Channel MOSFET
FDS6574A_NL
20V N-Channel PowerTrench MOSFET
FDS6574A June 2001 PRELIMINARY FDS6574A 20V N-Channel PowerTrench MOSFET General Description Features This N-Channel MOSFET has been designed 16 A, 20 V. R = 6 mΩ @ V = 4.5 V DS(ON) GS specifically to improve the overall efficiency of DC/DC R = 7 mΩ @ V = 2.5 V DS(ON) GS converters using either synchronous or conventional switching PWM controllers. It has been optimized for R = 9 mΩ @ V = 1.8 V DS(ON) GS low gate charge, low R and fast switching speed. DS(ON) • Low gate charge Applications • High performance trench technology for extremely • DC/DC converter low R DS(ON) • High power and current handling capability D D 5 4 D D 6 3 7 2 G S 8 1 S SO-8 S o Absolute Maximum Ratings T =25 C unless otherwise noted A Symbol Parameter Ratings Units V Drain-Source Voltage 20 V DSS V Gate-Source Voltage ± 8 V GSS I Drain Current – Continuous (Note 1a) 16 A D – Pulsed 80 Power Dissipation for Single Operation (Note 1a) 2.5 P W D (Note 1b) 1.2 (Note 1c) 1.0 T , T Operating and Storage Junction Temperature Range –55 to +175 J STG °C Thermal Characteristics Thermal Resistance, Junction-to-Ambient (Note 1a) 50 R °C/W θJA Thermal Resistance, Junction-to-Case (Note 1) 25 R °C/W θJC Package Marking and Ordering Information Device Marking Device Reel Size Tape width Quantity FDS6574A FDS6574A 13’’ 12mm 2500 units FDS6574A Rev B (W) 2001
