FDS6570A ,Single N-Channel 2.5V Specified PowerTrench MOSFETFeaturesThis N-Channel 2.5V specified MOSFET is produced 15 A, 20 V. R = 0.0075 Ω @ V = 4.5 VDS(on ..
FDS6570A_NL ,Single N-Channel 2.5V Specified PowerTrench MOSFETFeaturesThis N-Channel 2.5V specified MOSFET is produced 15 A, 20 V. R = 0.0075 Ω @ V = 4.5 VDS(on ..
FDS6570A_NL. ,Single N-Channel 2.5V Specified PowerTrench MOSFETApplications High power and current handling capability.• DC/DC converter Load switch Battery pr ..
FDS6572A ,20V N-Channel PowerTrench MOSFETGeneral Description MOSFET20V N-Channel September 2001FDS6572A
FDS6574A ,20V N-Channel PowerTrench MOSFETFeatures This N-Channel MOSFET has been designed 16 A, 20 V. R = 6 mΩ @ V = 4.5 V DS(ON) GSspecifi ..
FDS6574A_NL ,20V N-Channel PowerTrench MOSFETApplications • High performance trench technology for extremely • DC/DC converter low R DS(ON)• ..
FQI5N60CTU ,600V N-Channel Advance QFET C-SeriesFQB5N60C / FQI5N60CTMQFETFQB5N60C / FQI5N60C600V N-Channel MOSFET
FQI5P10TU ,100V P-Channel QFETFeaturesThese P-Channel enhancement mode power field effect • -4.5A, -100V, R = 1.05Ω @V = -10 VDS( ..
FQI7N10LTU ,100V N-Channel Logic Level QFETapplications such as high Low level gate drive requirments allowingefficiency switching DC/DC conv ..
FQI7N10TU ,100V N-Channel QFETapplications such as audioamplifiers, high efficiency switching DC/DC converters, andDC motor contr ..
FQI7N60 ,600V N-Channel MOSFETFeaturesThese N-Channel enhancement mode power field effect 7.4A, 600V, R = 1.0Ω @V = 10 VDS(on) ..
FQI7N60TU ,600V N-Channel QFETApril 2000TMQFET QFET QFET QFETFQB7N60 / FQI7N60600V N-Channel MOSFET
FDS6570A
Single N-Channel 2.5V Specified PowerTrench MOSFET
FDS6570A March 2000 FDS6570A Single N-Channel 2.5V Specified PowerTrench MOSFET General Description Features This N-Channel 2.5V specified MOSFET is produced 15 A, 20 V. R = 0.0075 Ω @ V = 4.5 V DS(on) GS using Fairchild Semiconductor's advanced R = 0.010 Ω @ V = 2.5 V. PowerTrench process that has been especially tailored DS(on) GS to minimize on-state resistance and yet maintain superior switching performance. Low gate charge (47nC typical). These devices are well suited for low voltage and batteryFast switching speed. powered applications where low in-line power loss and High performance trench technology for extremely fast switching are required. low R . DS(ON) Applications High power and current handling capability. • DC/DC converter Load switch Battery protection D D 5 4 D D 6 3 7 2 G S S 1 8 SO-8 S T = 25°C unless otherwise noted Absolute Maximum Ratings A Symbol Parameter FDS6570A Units V Drain-Source Voltage 20 V DSS V Gate-Source Voltage 8V GSS ± I Drain Current - Continuous (Note 1a) 15 A D - Pulsed 50 (Note 1a) PD Power Dissipation for Single Operation 2.5 W (Note 1b) 1.2 (Note 1c) 1 T , T Operating and Storage Junction Temperature Range -55 to +150 C J stg ° Thermal Characteristics (Note 1a) R JA Thermal Resistance, Junction-to-Ambient 50 C/W ° θ R Thermal Resistance, Junction-to-Case (Note 1) 25 C/W JC ° θ Package Outlines and Ordering Information Device Marking Device Reel Size Tape Width Quantity FDS6570A FDS6570A 13’’ 12mm 2500 units 2000 FDS6570A Rev. C
