FDS6375 ,P-Channel 2.5V Specified PowerTrench MOSFETFeatures This P -Channel 2.5V specified MOSFET is a rugged • –8 A, –20 V. R = 24 mΩ @ V = –4.5 V DS ..
FDS6375_NL ,Single P-Channel 2.5V Specified PowerTrench MOSFFETApplications low R DS(ON)• Power management • High current and power handling capability • Load sw ..
FDS6570A ,Single N-Channel 2.5V Specified PowerTrench MOSFETFeaturesThis N-Channel 2.5V specified MOSFET is produced 15 A, 20 V. R = 0.0075 Ω @ V = 4.5 VDS(on ..
FDS6570A_NL ,Single N-Channel 2.5V Specified PowerTrench MOSFETFeaturesThis N-Channel 2.5V specified MOSFET is produced 15 A, 20 V. R = 0.0075 Ω @ V = 4.5 VDS(on ..
FDS6570A_NL. ,Single N-Channel 2.5V Specified PowerTrench MOSFETApplications High power and current handling capability.• DC/DC converter Load switch Battery pr ..
FDS6572A ,20V N-Channel PowerTrench MOSFETGeneral Description MOSFET20V N-Channel September 2001FDS6572A
FQI3N90 ,900V N-Channel MOSFETFeaturesThese N-Channel enhancement mode power field effect 3.6A, 900V, R = 4.25 Ω @ V = 10 VDS(o ..
FQI3P20TU ,200V P-Channel QFETFeaturesThese P-Channel enhancement mode power field effect -2.8A, -200V, R = 2.7Ω @V = -10 VDS(o ..
FQI3P50TU ,500V P-Channel QFETAugust 2000TMQFET QFET QFET QFETFQB3P50 / FQI3P50500V P-Channel MOSFET
FQI3P50TU ,500V P-Channel QFETAugust 2000TMQFET QFET QFET QFETFQB3P50 / FQI3P50500V P-Channel MOSFET
FQI4N80 ,800V N-Channel MOSFETSeptember 2000TMQFETFQB4N80 / FQI4N80800V N-Channel MOSFET
FQI4N80TU ,800V N-Channel QFETFeaturesThese N-Channel enhancement mode power field effect 3.9A, 800V, R = 3.6Ω @V = 10 VDS(on) ..
FDS6375
P-Channel 2.5V Specified PowerTrench MOSFET
FDS6375 September 2001 FDS6375 Ò Ò P-Channel 2.5V Specified PowerTrench MOSFET General Description Features This P -Channel 2.5V specified MOSFET is a rugged · –8 A, –20 V. R = 24 mW @ V = –4.5 V DS(ON) GS gate version of Fairchild Semiconductor’s advanced RDS(ON) = 32 mW @ V GS = –2.5 V PowerTrench process. It has been optimized for power management applications with a wide range of gate · Low gate charge (26 nC typical) drive voltage (2.5V – 8V). · High performance trench technology for extremely Applications low R DS(ON) · Power management · High current and power handling capability · Load switch · Battery protection D D 5 4 D D D D 6 3 D D 7 2 G SO-8 G 8 1 S S S S S Pin 1SO-8 S o Absolute Maximum Ratings TA=25 C unless otherwise noted Symbol Parameter Ratings Units V Drain-Source Voltage –20 V DSS V Gate-Source Voltage ±8 V GSS ID Drain Current – Continuous (Note 1a) –8 A – Pulsed –50 P Power Dissipation for Single Operation (Note 1a) 2.5 W D (Note 1b) 1.2 (Note 1c) 1.0 T , T Operating and Storage Junction Temperature Range –55 to +175 °C J STG Thermal Characteristics Thermal Resistance, Junction-to-Ambient (Note 1a) 50 RqJA °C/W R Thermal Resistance, Junction-to-Ambient (Note 1c) 125 °C/W qJA Thermal Resistance, Junction-to-Case (Note 1) 25 R °C/W qJC Package Marking and Ordering Information Device Marking Device Reel Size Tape width Quantity FDS6375 FDS6375 13’’ 12mm 2500 units Ó2001 FDS6375 Rev E(W)
