FDS6299S ,30V N-Channel PowerTrench® SyncFETTMApplications • High power and current handling capability • Synchronous Rectifier for DC/DC Convert ..
FDS6299S ,30V N-Channel PowerTrench® SyncFETTM® FDS6299S 30V N-Channel PowerTrench SyncFET™ November 2007 tmFDS ..
FDS6299S ,30V N-Channel PowerTrench® SyncFETTMApplications • High power and current handling capability • Synchronous Rectifier for DC/DC Convert ..
FDS6299S ,30V N-Channel PowerTrench® SyncFETTMFeatures The FDS6299S is designed to replace a single SO-8 • 21 A, 30 V. R = 3.9 mΩ @ V = 10 V DS( ..
FDS6375 ,P-Channel 2.5V Specified PowerTrench MOSFETFeatures This P -Channel 2.5V specified MOSFET is a rugged • –8 A, –20 V. R = 24 mΩ @ V = –4.5 V DS ..
FDS6375_NL ,Single P-Channel 2.5V Specified PowerTrench MOSFFETApplications low R DS(ON)• Power management • High current and power handling capability • Load sw ..
FQI27N25 ,250V N-Channel MOSFET
FQI34P10 ,100V P-Channel MOSFETapplications such as audio amplifier,high efficiency switching DC/DC converters, and DC motorcontro ..
FQI3N25TU ,250V N-Channel QFETFeaturesThese N-Channel enhancement mode power field effect 2.8A, 250V, R = 2.2Ω @V = 10 VDS(on) ..
FQI3N90 ,900V N-Channel MOSFETFeaturesThese N-Channel enhancement mode power field effect 3.6A, 900V, R = 4.25 Ω @ V = 10 VDS(o ..
FQI3P20TU ,200V P-Channel QFETFeaturesThese P-Channel enhancement mode power field effect -2.8A, -200V, R = 2.7Ω @V = -10 VDS(o ..
FQI3P50TU ,500V P-Channel QFETAugust 2000TMQFET QFET QFET QFETFQB3P50 / FQI3P50500V P-Channel MOSFET
FDS6299S
30V N-Channel PowerTrench® SyncFETTM
® FDS6299S 30V N-Channel PowerTrench SyncFET™ November 2007 tm FDS6299S ® ™ 30V N-Channel PowerTrench SyncFET General Description Features The FDS6299S is designed to replace a single SO-8 • 21 A, 30 V. R = 3.9 mΩ @ V = 10 V DS(ON) GS MOSFET and Schottky diode in synchronous DC:DC R = 5.1 mΩ @ V = 4.5 V DS(ON) GS power supplies. This 30V MOSFET is designed to maximize power conversion efficiency, providing a low • Includes SyncFET Schottky body diode R and low gate charge. The FDS6299S includes DS(ON) a patented combination of a MOSFET monolithically • High performance trench technology for extremely low integrated with a Schottky diode. R and fast switching DS(ON) Applications • High power and current handling capability • Synchronous Rectifier for DC/DC Converters • 100% R (Gate Resistance) tested G • Notebook Vcore low side switch • Point of load low side switch • Termination is Lead-free and RoHS Compliant D D 5 4 D D 6 3 7 2 G S 8 1 S SO-8 S o Absolute Maximum Ratings T =25 C unless otherwise noted A Symbol Parameter Ratings Units V Drain-Source Voltage 30 V DSS V Gate-Source Voltage V GSS ±20 I Drain Current – Continuous (Note 1a) 21 A D – Pulsed 105 P Power Dissipation for Single Operation (Note 1a) 2.5 W D (Note 1b) 1.2 (Note 1c) 1 T , T Operating and Storage Junction Temperature Range –55 to +150 J STG °C Thermal Characteristics R Thermal Resistance, Junction-to-Ambient (Note 1a) 50 °C/W θJA (Note 1) 25 R Thermal Resistance, Junction-to-Case θJC Package Marking and Ordering Information Device Marking Device Reel Size Tape width Quantity FDS6299S FDS6299S 13’’ 12mm 2500 units FDS6299S Rev C1 (W) ©2007
