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FDS6294_NL ,30V N-Channel Fast Switching PowerTrench MOSFETFeaturesThis N-Channel MOSFET has been designed• 13 A, 30 V. R = 11.3 mΩ @ V = 10 VDS(ON) GSspecif ..
FDS6298 ,30V N-Channel Fast Switching PowerTrench?MOSFETÒ Ò Ò ÒFDS6298 30V N-Channel Fast Switching PowerTrench MOSFET April 2007FDS6298 tmÒ Ò Ò Ò30V ..
FDS6299S ,30V N-Channel PowerTrench® SyncFETTMApplications • High power and current handling capability • Synchronous Rectifier for DC/DC Convert ..
FDS6299S ,30V N-Channel PowerTrench® SyncFETTM® FDS6299S 30V N-Channel PowerTrench SyncFET™ November 2007 tmFDS ..
FDS6299S ,30V N-Channel PowerTrench® SyncFETTMApplications • High power and current handling capability • Synchronous Rectifier for DC/DC Convert ..
FDS6299S ,30V N-Channel PowerTrench® SyncFETTMFeatures The FDS6299S is designed to replace a single SO-8 • 21 A, 30 V. R = 3.9 mΩ @ V = 10 V DS( ..
FQH8N100C ,N-Channel QFET?MOSFET 1000V, 8.0A, 1.45?FQH8N100C 1000V N-Channel MOSFETMarch 2008® QFETFQH8N100C1000V N-Channel MOSFET
FQI12N50 ,500V N-Channel MOSFETFeaturesThese N-Channel enhancement mode power field effect • 12.1A, 500V, R = 0.49Ω @V = 10 VDS(on ..
FQI13N06TU ,60V N-Channel QFETapplications such as DC/DCconverters, high efficiency switching for powermanagement in portable and ..
FQI17N08TU ,80V N-Channel QFETapplications such as automotive,high efficiency switching for DC/DC converters, and DCmotor contro ..
FQI17P06 ,60V P-Channel MOSFETFeaturesThese P-Channel enhancement mode power field effect • -17A, -60V, R = 0.12Ω @V = -10 VDS(on ..
FQI20N06 ,60V N-Channel MOSFETapplications such as automotive, DC/DC converters, and high efficiency switching for powermanagemen ..
FDS6294-FDS6294_NL
30V N-Channel Fast Switching PowerTrench MOSFET
FDS6294 November 2003 FDS6294 Ò 30V N-Channel Fast Switching PowerTrench MOSFET General Description Features This N-Channel MOSFET has been designed · 13 A, 30 V. R = 11.3 mW @ V = 10 V DS(ON) GS specifically to improve the overall efficiency of DC/DC R = 14.4 mW @ V = 4.5 V DS(ON) GS converters using either synchronous or conventional switching PWM controllers. It has been optimized for · Low gate charge (10 nC typical) low gate charge, low R and fast switching speed. DS(ON) · High performance trench technology for extremely Applications low R DS(ON) · DC/DC converter · High power and current handling capability. · Power management · Load switch D D 5 4 DD DD 6 3 D D 7 2 SO-8 G G 8 1 S S S S S Pin 1SO-8 S o Absolute Maximum Ratings TA=25 C unless otherwise noted Symbol Parameter Ratings Units V Drain-Source Voltage 30 V DSS V Gate-Source Voltage ±20 V GSS I Drain Current – Continuous (Note 1a) 13 A D – Pulsed 50 Power Dissipation for Single Operation (Note 1a) 3.0 P W D (Note 1b) 1.2 T , T Operating and Storage Junction Temperature Range –55 to +175 J STG °C Thermal Characteristics R Thermal Resistance, Junction-to-Ambient (Note 1a) 50 °C/W qJA Thermal Resistance, Junction-to-Ambient (Note 1b) 125 R qJA R Thermal Resistance, Junction-to-Case (Note 1) 25 qJC Package Marking and Ordering Information Device Marking Device Reel Size Tape width Quantity FDS6294 FDS6294 13’’ 12mm 2500 units Ó2003 FDS6294 Rev D(W)