FDS6162N7 ,20V N-Channel PowerTrench MOSFETApplications • High power and current handling capability • Synchronous rectifier • Fast switching ..
FDS6294 ,30V N-Channel Fast Switching PowerTrench MOSFETFeaturesThis N-Channel MOSFET has been designed• 13 A, 30 V. R = 11.3 mΩ @ V = 10 VDS(ON) GSspecif ..
FDS6294_NL ,30V N-Channel Fast Switching PowerTrench MOSFETFeaturesThis N-Channel MOSFET has been designed• 13 A, 30 V. R = 11.3 mΩ @ V = 10 VDS(ON) GSspecif ..
FDS6298 ,30V N-Channel Fast Switching PowerTrench?MOSFETÒ Ò Ò ÒFDS6298 30V N-Channel Fast Switching PowerTrench MOSFET April 2007FDS6298 tmÒ Ò Ò Ò30V ..
FDS6299S ,30V N-Channel PowerTrench® SyncFETTMApplications • High power and current handling capability • Synchronous Rectifier for DC/DC Convert ..
FDS6299S ,30V N-Channel PowerTrench® SyncFETTM® FDS6299S 30V N-Channel PowerTrench SyncFET™ November 2007 tmFDS ..
FQD9N25 ,250V N-Channel MOSFET
FQD9N25 ,250V N-Channel MOSFET
FQD9N25TM ,250V N-Channel QFET
FQD9N25TM ,250V N-Channel QFET
FQG4902 ,250V Dual N & P-Channel MOSFETElectrical Characteristics T = 25°C unless otherwise notedASymbol Parameter Test Conditions Typ ..
FQG4904 ,400V Dual N & P-Channel MOSFETElectrical Characteristics T = 25°C unless otherwise notedASymbol Parameter Test Conditions Typ ..
FDS6162N7
20V N-Channel PowerTrench MOSFET
FDS6162N7 June 2002 FDS6162N7 20V N-Channel PowerTrench MOSFET General Description Features This N-Channel MOSFET has been designed • 23 A, 20 V R = 3.5 mΩ @ V = 4.5 V DS(ON) GS specifically to improve the overall efficiency of DC/DC R = 5.0 mΩ @ V = 2.5 V DS(ON) GS converters using either synchronous or conventional switching PWM controllers. It has been optimized for • High performance trench technology for extremely “low side” synchronous rectifier operation, providing an extremely low R in a small package. low R DS(ON) DS(ON) Applications • High power and current handling capability • Synchronous rectifier • Fast switching • DC/DC converter • Bottomless� SO-8 package: Enhanced thermal performance in industry-standard package size Bottom-side D Drain Contact D S 5 4 DS DS 6 3 S D 7 2 Bottomless G G 8 1 S SO-8 S S S S Pin 1 SO-8 S o Absolute Maximum Ratings T =25 C unless otherwise noted A Symbol Parameter Ratings Units V Drain-Source Voltage 20 V DSS V Gate-Source Voltage ± 12 V GSS I Drain Current – Continuous (Note 1a) 23 A D – Pulsed 60 Power Dissipation (Note 1a) 3.0 P W D T , T Operating and Storage Junction Temperature Range –55 to +150 °C J STG Thermal Characteristics R Thermal Resistance, Junction-to-Ambient (Note 1a) 40 °C/W θJA Thermal Resistance, Junction-to-Case 0.5 R θJC Package Marking and Ordering Information Device Marking Device Reel Size Tape width Quantity FDS6162N7 FDS6162N7 13’’ 12mm 2500 units FDS6162N7 Rev C1 (W) 2002
