FDS6064N7 ,20V N-Channel PowerTrench MOSFETApplications • High power and current handling capability • Synchronous rectifier • DC/DC converter ..
FDS6162N3 ,20V N-Channel PowerTrench MOSFETApplications • High power and current handling capability • Synchronous rectifier • Fast switching ..
FDS6162N7 ,20V N-Channel PowerTrench MOSFETApplications • High power and current handling capability • Synchronous rectifier • Fast switching ..
FDS6294 ,30V N-Channel Fast Switching PowerTrench MOSFETFeaturesThis N-Channel MOSFET has been designed• 13 A, 30 V. R = 11.3 mΩ @ V = 10 VDS(ON) GSspecif ..
FDS6294_NL ,30V N-Channel Fast Switching PowerTrench MOSFETFeaturesThis N-Channel MOSFET has been designed• 13 A, 30 V. R = 11.3 mΩ @ V = 10 VDS(ON) GSspecif ..
FDS6298 ,30V N-Channel Fast Switching PowerTrench?MOSFETÒ Ò Ò ÒFDS6298 30V N-Channel Fast Switching PowerTrench MOSFET April 2007FDS6298 tmÒ Ò Ò Ò30V ..
FQD8N25 ,250V N-Channel MOSFETFeaturesThese N-Channel enhancement mode power field effect • 6.2A, 250V, R = 0.55Ω @V = 10 VDS(on) ..
FQD8N25TF ,250V N-Channel QFETFeaturesThese N-Channel enhancement mode power field effect • 6.2A, 250V, R = 0.55Ω @V = 10 VDS(on) ..
FQD8P10 ,100V P-Channel MOSFETapplications such as audio amplifier,high efficiency switching DC/DC converters, and DC motorcontro ..
FQD8P10TM ,100V P-Channel QFETapplications such as audio amplifier,high efficiency switching DC/DC converters, and DC motorcontro ..
FQD8P10TM ,100V P-Channel QFETFeaturesThese P-Channel enhancement mode power field effect • -6.6A, -100V, R = 0.53Ω @V = -10 VDS( ..
FQD9N08 ,80V N-Channel MOSFETapplications such as automotive,high efficiency switching for DC/DC converters, and DCmotor control ..
FDS6064N7
20V N-Channel PowerTrench MOSFET
FDS6064N7 July 2002 FDS6064N7 Ò 20V N-Channel PowerTrench MOSFET General Description Features This N-Channel MOSFET has been designed · 23 A, 20 V. R = 3.5 mW @ V = 4.5 V DS(ON) GS specifically to improve the overall efficiency of DC/DC R = 4 mW @ V = 2.5 V DS(ON) GS converters using either synchronous or conventional switching PWM controllers. It has been optimized for RDS(ON) = 6 mW @ V GS = 1.8 V “low side” synchronous rectifier operation, providing an extremely low R in a small package. DS(ON) · High performance trench technology for extremely low R DS(ON) Applications · High power and current handling capability · Synchronous rectifier · DC/DC converter · Fast switching, low gate charge · Bottomlessä SO-8 package: Enhanced thermal performance in industry-standard package size Bottom-side D Drain Contact S D 5 4 S D S D 6 3 S D 7 2 Bottomless G G S 8 1 SO-8 S S S S Pin 1SO-8 S o Absolute Maximum Ratings T =25 C unless otherwise noted A Symbol Parameter Ratings Units VDSS Drain-Source Voltage 20 V V Gate-Source Voltage ± 8 GSS I Drain Current – Continuous (Note 1a) 23 A D – Pulsed 60 PD Power Dissipation (Note 1a) 3.0 W T , T Operating and Storage Junction Temperature Range –55 to +150 °C J STG Thermal Characteristics R Thermal Resistance, Junction-to-Ambient (Note 1a) 40 °C/W qJA Thermal Resistance, Junction-to-Case 0.5 R qJC Package Marking and Ordering Information Device Marking Device Reel Size Tape width Quantity FDS6064N7 FDS6064N7 13’’ 12mm 2500 units Ó2002 FDS6064N7 Rev D1 (W)
