FDS5170N7 ,60V N-Channel PowerTrench MOSFETFeatures This N-Channel MOSFET has been designed • 10.6 A, 60 V. R = 12 mΩ @ V = 10 V DS(ON) GSspe ..
FDS5170N7 ,60V N-Channel PowerTrench MOSFETApplications • High power and current handling capability • Synchronous rectifier • Fast switching, ..
FDS5351 ,60V N-Channel PowerTrench?MOSFETGeneral Description Max r = 35mΩ at V = 10V, I = 6.1A This N-Channel MOSFET is produced using ..
FDS5670 ,60V N-Channel PowerTrench TM MOSFET ..
FDS5670_NL ,60V N-Channel PowerTrench MOSFET ..
FDS5672 ,60V N-Channel PowerTrench?MOSFETApplications DC/DC convertersBranding Dash5 46 3517 2238 14SO-82005 Fairchild Semiconductor Corpor ..
FQD6N40CTM ,400V N-Channel Advance QFET C-SeriesFeaturesThese N-Channel enhancement mode power field effect 4.5A, 400V, R = 1.0 Ω @V = 10 VDS(o ..
FQD6N40CTM ,400V N-Channel Advance QFET C-SeriesFQD6N40C / FQU6N40C TMQFETFQD6N40C / FQU6N40C400V N-Channel MOSFET
FQD6N50C ,500V N-Channel Advance Q-FET C-SeriesFQD6N50C / FQU6N50C ®QFETFQD6N50C / FQU6N50C500V N-Channel MOSFET
FQD6N50CTM ,500V N-Channel Advance Q-FET C-SeriesFeaturesThese N-Channel enhancement mode power field effect 4.5A, 500V, R = 1.2 Ω @V = 10 VDS(on) ..
FQD6N60C ,600V N-Channel MOSFETFeatures Description 4 A, 600 V, R = 2.0 Ω @ V = 10 V These N-Channel enhancement mode power field ..
FQD6P25 ,250V P-Channel MOSFETFeaturesThese P-Channel enhancement mode power field effect -4.7A, -250V, R = 1.1Ω @V = -10 VDS(o ..
FDS5170N7
60V N-Channel PowerTrench MOSFET
FDS5170N7 May 2003 FDS5170N7 60V N-Channel PowerTrench MOSFET General Description Features This N-Channel MOSFET has been designed • 10.6 A, 60 V. R = 12 mΩ @ V = 10 V DS(ON) GS specifically to improve the overall efficiency of DC/DC R = 15 mΩ @ V = 6.0 V DS(ON) GS converters using either synchronous or conventional switching PWM controllers. It has been optimized for • High performance trench technology for extremely “low side” synchronous rectifier operation, providing an extremely low R in a small package. DS(ON) low R DS(ON) Applications • High power and current handling capability • Synchronous rectifier • Fast switching, low gate charge (51nC typical) • DC/DC converter • FLMP SO-8 package: Enhanced thermal performance in industry-standard package size Bottom-side Drain Contact 5 4 6 3 7 2 8 1 o Absolute Maximum Ratings T =25 C unless otherwise noted A Symbol Parameter Ratings Units V Drain-Source Voltage 60 V DSS V Gate-Source Voltage V GSS ± 20 I Drain Current – Continuous (Note 1a) 10.6 A D – Pulsed 50 P Power Dissipation for Single Operation (Note 1a) 3.0 W D T , T Operating and Storage Junction Temperature Range –55 to +150 J STG °C Thermal Characteristics R Thermal Resistance, Junction-to-Ambient (Note 1a) 40 °C/W θJA Thermal Resistance, Junction-to-Case (Note 1) 0.5 R θJC Package Marking and Ordering Information Device Marking Device Reel Size Tape width Quantity FDS5170N7 FDS5170N7 13’’ 12mm 2500 units FDS5170N7 Rev C1(W) 2002
