FDS4953_NL ,Dual30V P-Channel PowerTrench MOSFETFeatures This P-Channel MOSFET is a rugged gate version of • –5 A, –30 V R = 55 mΩ @ V = –10 V DS(O ..
FDS4953_NL. ,Dual30V P-Channel PowerTrench MOSFETApplications • Power management • High performance trench technology for extremely low RDS(ON) • ..
FDS5170N7 ,60V N-Channel PowerTrench MOSFETFeatures This N-Channel MOSFET has been designed • 10.6 A, 60 V. R = 12 mΩ @ V = 10 V DS(ON) GSspe ..
FDS5170N7 ,60V N-Channel PowerTrench MOSFETApplications • High power and current handling capability • Synchronous rectifier • Fast switching, ..
FDS5351 ,60V N-Channel PowerTrench?MOSFETGeneral Description Max r = 35mΩ at V = 10V, I = 6.1A This N-Channel MOSFET is produced using ..
FDS5670 ,60V N-Channel PowerTrench TM MOSFET ..
FQD5N60CTM ,600V N-Channel Advance QFET C-SeriesFQD5N60C / FQU5N60CTMQFETFQD5N60C / FQU5N60C600V N-Channel MOSFET
FQD5P10 ,100V P-Channel MOSFETapplications such as audio amplifier,high efficiency switching DC/DC converters, and DC motorcontro ..
FQD5P10TF ,100V P-Channel QFETapplications such as audio amplifier,high efficiency switching DC/DC converters, and DC motorcontro ..
FQD5P10TF ,100V P-Channel QFETFeaturesThese P-Channel enhancement mode power field effect • -3.6A, -100V, R = 1.05Ω @V = -10 VDS( ..
FQD5P10TM ,100V P-Channel QFETFQD5P10 / FQU5P10TMQFETFQD5P10 / FQU5P10100V P-Channel MOSFET
FQD5P20 ,200V P-Channel MOSFETGeneral DescriptionThese P-Channel enhancement mode power field effect
FDS4953_NL-FDS4953_NL.
Dual30V P-Channel PowerTrench MOSFET
FDS4953 May 2002 FDS4953 Ò Ò Dual 30V P-Channel PowerTrench MOSFET General Description Features This P-Channel MOSFET is a rugged gate version of · –5 A, –30 V R = 55 mW @ V = –10 V DS(ON) GS Fairchild Semiconductor’s advanced PowerTrench RDS(ON) = 95 mW @ V GS = –4.5 V process. It has been optimized for power management applications requiring a wide range of gave drive · Low gate charge (6nC typical) voltage ratings (4.5V – 25V). · Fast switching speed Applications · Power management · High performance trench technology for extremely low RDS(ON) · Load switch · Battery protection · High power and current handling capability D1 D 5 4 D1 D D2 D Q1 6 3 D2 D 7 2 G1 Q2 SO-8 G S1 8 1 G2 S S S2 SO-8 S Pin 1 o Absolute Maximum Ratings TA=25 C unless otherwise noted Symbol Parameter Ratings Units V Drain-Source Voltage –30 V DSS V Gate-Source Voltage ±20 V GSS ID Drain Current – Continuous (Note 1a) –5 A – Pulsed –20 P Power Dissipation for Dual Operation 2 D P Power Dissipation for Single Operation (Note 1a) 1.6 W D (Note 1b) 1 (Note 1c) 0.9 T , T Operating and Storage Junction Temperature Range –55 to +175 °C J STG Thermal Characteristics R Thermal Resistance, Junction-to-Ambient (Note 1a) 78 °C/W qJA R Thermal Resistance, Junction-to-Case (Note 1) 40 °C/W qJC Package Marking and Ordering Information Device Marking Device Reel Size Tape width Quantity FDS4953 FDS4953 13’’ 12mm 2500 units Ó2002 FDS4953 Rev D1(W)
