FDS4897C ,40V Dual N & P-Channel PowerTrench?MOSFETFeatures These dual N- and P-Channel enhancement mode • Q1: N-Channel power field effect transisto ..
FDS4935 ,Dual 30V P-Channel PowerTrench MOSFETFeatures This P-Channel MOSFET is a rugged gate version of • –7 A, –30 V R = 23 mΩ @ V = –10 V DS(O ..
FDS4935_NL ,Dual 30V P-Channel PowerTrench MOSFETApplications • Power management • High performance trench technology for extremely low R DS(ON)• ..
FDS4935A ,Dual 30V P-Channel PowerTrench MOSFETFeatures This P-Channel MOSFET is a rugged gate version of • –7 A, –30 V R = 23 mΩ @ V = –10 V DS(O ..
FDS4935A. ,Dual 30V P-Channel PowerTrench MOSFETFeatures This P-Channel MOSFET is a rugged gate version of • –7 A, –30 V R = 23 mΩ @ V = –10 V DS(O ..
FDS4935A_NL ,Dual 30V P-Channel PowerTrench® MOSFETApplications • Power management • High performance trench technology for extremely low R DS(ON)• ..
FQD3P20 ,200V P-Channel MOSFETFeaturesThese P-Channel enhancement mode power field effect -2.4A, -200V, R = 2.7Ω @V = -10 VDS(o ..
FQD3P20TF ,200V P-Channel QFETFeaturesThese P-Channel enhancement mode power field effect -2.4A, -200V, R = 2.7Ω @V = -10 VDS(o ..
FQD3P50 ,500V P-Channel MOSFETAugust 2000TMQFET QFET QFET QFETFQD3P50 / FQU3P50500V P-Channel MOSFET
FQD3P50TF ,500V P-Channel QFETAugust 2000TMQFET QFET QFET QFETFQD3P50 / FQU3P50500V P-Channel MOSFET
FQD3P50TM ,500V P-Channel QFETGeneral DescriptionThese P-Channel enhancement mode power field effect
FQD45N03L ,30V LOGIC N-Channel MOSFETapplications such as DC/DCconverters, high efficiency switching for powermanagement in portable and ..
FDS4897C
40V Dual N & P-Channel PowerTrench?MOSFET
® FDS4897C Dual N & P-Channel PowerTrench MOSFET November 2005 FDS4897C ® Dual N & P-Channel PowerTrench MOSFET General Description Features These dual N- and P-Channel enhancement mode • Q1: N-Channel power field effect transistors are produced using 6.2A, 40V R = 29mΩ @ V = 10V DS(on) GS Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize R = 36mΩ @ V = 4.5V DS(on) GS on-state resistance and yet maintain superior switching performance. • Q2: P-Channel –4.4A, –40V R = 46mΩ @ V = –10V Application DS(on) GS R = 63mΩ @ V = –4.5V DS(on) GS • Inverter • High power handling capability in a widely used • Power Supplies surface mount package • RoHS compliant Q2 D2 D 5 4 D2 D D1 D 6 3 D1 D Q1 7 2 G2 SO-8 S2 G G1 8 1 S S1 S SO-8 Pin 1 S Absolute Maximum Ratings T = 25°C unless otherwise noted A Symbol Parameter Q1 Q2 Units V Drain-Source Voltage 40 40 V DSS V Gate-Source Voltage ±20 ±20 V GSS I Drain Current - Continuous (Note 1a) 6.2 –4.4 A D - Pulsed 20 –20 P Power Dissipation for Dual Operation 2 W D Power Dissipation for Single Operation (Note 1a) 1.6 (Note 1b) 1 (Note 1c) 0.9 T , T Operating and Storage Junction Temperature Range –55 to +150 J STG °C Thermal Characteristics Thermal Resistance, Junction-to-Ambient (Note 1a) 78 R °C/W θJA Thermal Resistance, Junction-to-Case (Note 1) 40 R °C/W θJC Package Marking and Ordering Information Device Marking Device Reel Size Tape width Quantity FDS4897C FDS4897C 13” 12mm 2500 units ©2005 FDS4897C Rev C(W)
