FDS4780 ,40V N-Channel PowerTrench MOSFETElectrical Characteristics T = 25°C unless otherwise noted ASymbol Parameter Test Conditions MinTyp ..
FDS4885C ,40V Dual N & P-Channel PowerTrench MOSFETApplications• High power and handling capability in a widely• Synchronous rectifierused surface mou ..
FDS4885C_NL ,40V Dual N & P-Channel PowerTrench MOSFETElectrical Characteristics T = 25°C unless otherwise notedASymbol Parameter Test Conditions Type Mi ..
FDS4897C ,40V Dual N & P-Channel PowerTrench?MOSFETFeatures These dual N- and P-Channel enhancement mode • Q1: N-Channel power field effect transisto ..
FDS4935 ,Dual 30V P-Channel PowerTrench MOSFETFeatures This P-Channel MOSFET is a rugged gate version of • –7 A, –30 V R = 23 mΩ @ V = –10 V DS(O ..
FDS4935_NL ,Dual 30V P-Channel PowerTrench MOSFETApplications • Power management • High performance trench technology for extremely low R DS(ON)• ..
FQD2N60CTM , N-Channel QFET® MOSFET
FQD2N60CTM , N-Channel QFET® MOSFET
FQD2N60TF ,600V N-Channel QFETFeaturesThese N-Channel enhancement mode power field effect 2.0A, 600V, R = 4.7Ω @V = 10 VDS(on) ..
FQD2N60TF ,600V N-Channel QFETFeaturesThese N-Channel enhancement mode power field effect 2.0A, 600V, R = 4.7Ω @V = 10 VDS(on) ..
FQD2N60TM ,600V N-Channel QFETApril 2000TMQFET QFET QFET QFETFQD2N60 / FQU2N60600V N-Channel MOSFET
FQD2N80 ,800V N-Channel MOSFETFeaturesThese N-Channel enhancement mode power field effect 1.8A, 800V, R = 6.3Ω @V = 10 VDS(on) ..
FDS4780
40V N-Channel PowerTrench MOSFET
FDS4780 July 2002 FDS4780 40V N-Channel PowerTrench MOSFET General Description Features This N-Channel MOSFET has been designed • 10.8 A, 40 V. R = 10.5 mΩ @ V = 10 V DS(ON) GS specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional • Low gate charge (30 nC) switching PWM controllers. It has been optimized for low gate charge, low R and fast switching speed. DS(ON) • High performance trench technology for extremely low R DS(ON) Applications • High power and current handling capability • DC/DC converter DD 5 4 DD D D 6 3 D D 7 2 G SO-8 G 8 1 S S S S S Pin 1SO-8 S o Absolute Maximum Ratings T =25 C unless otherwise noted A Symbol Parameter Ratings Units V Drain-Source Voltage 40 V DSS V Gate-Source Voltage V GSS ± 20 I Drain Current – Continuous (Note 1a) 10.8 A D – Pulsed 45 P Power Dissipation for Single Operation (Note 1a) 2.5 W D (Note 1b) 1.4 (Note 1c) 1.2 T , T Operating and Storage Junction Temperature Range –55 to +175 °C J STG Thermal Characteristics R Thermal Resistance, Junction-to-Ambient (Note 1a) 50 °C/W θJA R Thermal Resistance, Junction-to-Ambient (Note 1c) 125 °C/W θJA R Thermal Resistance, Junction-to-Case (Note 1) 25 °C/W θJC Package Marking and Ordering Information Device Marking Device Reel Size Tape width Quantity FDS4780 FDS4780 13’’ 11mm 2500 units FDS4780 Rev A2 (W) 2002
