FDS4770 ,40V N-Channel PowerTrench MOSFETApplications • Fast switching, low gate charge • Synchronous rectifier • DC/DC converter DD5 4DDD ..
FDS4770 ,40V N-Channel PowerTrench MOSFETElectrical Characteristics T = 25°C unless otherwise noted ASymbol Parameter Test Conditions MinTyp ..
FDS4770 ,40V N-Channel PowerTrench MOSFETFeatures This N-Channel MOSFET has been designed • 13.2 A, 40 V. R = 7.5 mΩ @ V = 10 V DS(ON) GSs ..
FDS4780 ,40V N-Channel PowerTrench MOSFETElectrical Characteristics T = 25°C unless otherwise noted ASymbol Parameter Test Conditions MinTyp ..
FDS4885C ,40V Dual N & P-Channel PowerTrench MOSFETApplications• High power and handling capability in a widely• Synchronous rectifierused surface mou ..
FDS4885C_NL ,40V Dual N & P-Channel PowerTrench MOSFETElectrical Characteristics T = 25°C unless otherwise notedASymbol Parameter Test Conditions Type Mi ..
FQD2N60 ,600V N-Channel MOSFETFeaturesThese N-Channel enhancement mode power field effect 2.0A, 600V, R = 4.7Ω @V = 10 VDS(on) ..
FQD2N60C ,600V N-Channel MOSFETFeaturesThese N-Channel enhancement mode power field effect 1.9A, 600V, R = 4.7Ω @V = 10 VDS(on) ..
FQD2N60C ,600V N-Channel MOSFETFeaturesThese N-Channel enhancement mode power field effect 1.9A, 600V, R = 4.7Ω @V = 10 VDS(on) ..
FQD2N60CTM , N-Channel QFET® MOSFET
FQD2N60CTM , N-Channel QFET® MOSFET
FQD2N60TF ,600V N-Channel QFETFeaturesThese N-Channel enhancement mode power field effect 2.0A, 600V, R = 4.7Ω @V = 10 VDS(on) ..
FDS4770
40V N-Channel PowerTrench MOSFET
FDS4770 July 2002 FDS4770 40V N-Channel PowerTrench MOSFET General Description Features This N-Channel MOSFET has been designed • 13.2 A, 40 V. R = 7.5 mΩ @ V = 10 V DS(ON) GS specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional • High performance trench technology for extremely switching PWM controllers. It has been optimized for low R DS(ON) “low side” synchronous rectifier operation, providing an extremely low R in a small package. DS(ON) • High power and current handling capability Applications • Fast switching, low gate charge • Synchronous rectifier • DC/DC converter DD 5 4 DD DD 6 3 D D 7 2 SO-8 G G 8 1 S S S S S SO-8 Pin 1 S o Absolute Maximum Ratings T =25 C unless otherwise noted A Symbol Parameter Ratings Units V Drain-Source Voltage 40 V DSS V Gate-Source Voltage ± 20 V GSS I Drain Current – Continuous (Note 1a) 13.2 A D – Pulsed 60 Power Dissipation for Single Operation (Note 1a) 2.5 P W D (Note 1b) 1.4 (Note 1c) 1.2 T , T Operating and Storage Junction Temperature Range –55 to +175 J STG °C Thermal Characteristics R Thermal Resistance, Junction-to-Ambient (Note 1a) 50 °C/W θJA Thermal Resistance, Junction-to-Ambient (Note 1c) 125 R °C/W θJA Thermal Resistance, Junction-to-Case (Note 1) 25 R °C/W θJC Package Marking and Ordering Information Device Marking Device Reel Size Tape width Quantity FDS4770 FDS4770 13’’ 12mm 2500 units FDS4770 Rev A2 (W) 2002
