FDS4685 ,40V P-Channel PowerTrench MOSFETGeneral DescriptionDS(ON) High power and current handling capabilityThis P-Channel MOSFET is a rugg ..
FDS4770 ,40V N-Channel PowerTrench MOSFETApplications • Fast switching, low gate charge • Synchronous rectifier • DC/DC converter DD5 4DDD ..
FDS4770 ,40V N-Channel PowerTrench MOSFETElectrical Characteristics T = 25°C unless otherwise noted ASymbol Parameter Test Conditions MinTyp ..
FDS4770 ,40V N-Channel PowerTrench MOSFETFeatures This N-Channel MOSFET has been designed • 13.2 A, 40 V. R = 7.5 mΩ @ V = 10 V DS(ON) GSs ..
FDS4780 ,40V N-Channel PowerTrench MOSFETElectrical Characteristics T = 25°C unless otherwise noted ASymbol Parameter Test Conditions MinTyp ..
FDS4885C ,40V Dual N & P-Channel PowerTrench MOSFETApplications• High power and handling capability in a widely• Synchronous rectifierused surface mou ..
FQD2N50 ,500V N-Channel MOSFET
FQD2N50 ,500V N-Channel MOSFET
FQD2N50TM ,500V N-Channel QFET
FQD2N50TM ,500V N-Channel QFET
FQD2N60 ,600V N-Channel MOSFETFeaturesThese N-Channel enhancement mode power field effect 2.0A, 600V, R = 4.7Ω @V = 10 VDS(on) ..
FQD2N60C ,600V N-Channel MOSFETFeaturesThese N-Channel enhancement mode power field effect 1.9A, 600V, R = 4.7Ω @V = 10 VDS(on) ..
FDS4685
40V P-Channel PowerTrench MOSFET
® FDS4685 40V P-Channel PowerTrench MOSFET June 2005 FDS4685 ® 40V P-Channel PowerTrench MOSFET Features Applications ■ –8.2 A, –40 V R = 0.027 Ω @ V = –10 V ■ Power management DS(ON) GS R = 0.035 Ω @ V = –4.5 V DS(ON) GS ■ Load switch ■ Fast switching speed ■ Battery protection ■ High performance trench technology for extremely low R General Description DS(ON) ■ High power and current handling capability This P-Channel MOSFET is a rugged gate version of Fairchild Semiconductor’s advanced PowerTrench process. It has been optimized for power management applications requiring a wide range of gate drive voltage ratings (4.5V – 20V). D 5 4 D D 6 3 D 7 2 G SO-8 S 8 1 S Pin 1 S Absolute Maximum Ratings T = 25°C unless otherwise noted A Symbol Parameter Ratings Units V Drain-Source Voltage –40 V DSS V Gate-Source Voltage ±20 V GSS I Drain Current - Continuous (Note 1a) –8.2 A D - Pulsed –50 P Power Dissipation for Single Operation (Note 1a) 2.5 W D (Note 1b) 1.4 (Note 1c) 1.2 T , T Operating and Storage Junction Temperature Range –55 to +150 °C J STG Thermal Characteristics R Thermal Resistance, Junction-to-Ambient (Note 1a) 50 °C/W θJA R Thermal Resistance, Junction-to-Ambient (Note 1c) 125 θJA R Thermal Resistance, Junction-to-Case (Note 1) 25 θJC Package Marking and Ordering Information Device Marking Device Reel Size Tape width Quantity FDS4685 FDS4685 13” 12mm 2500 units ©2005 1 FDS4685 Rev. C(W)
