FDS4501H_NL ,Complementary PowerTrench Half-Bridge MOSFETElectrical Characteristics T = 25°C unless otherwise noted ASymbol Parameter Test Conditions Type M ..
FDS4559 ,60V Complementary PowerTrench MOSFETFeatures This complementary MOSFET device is produced using • Q1: N-Channel Fairchild’s advanced Po ..
FDS4559_F085 ,60V Complementary PowerTrench?MOSFETElectrical Characteristics T = 25°C unless otherwise noted ASymbol Parameter Test Conditions Type M ..
FDS4559_NL ,60V Complementary PowerTrench MOSFETElectrical Characteristics T = 25°C unless otherwise noted ASymbol Parameter Test Conditions Type M ..
FDS4672A ,40V N-Channel PowerTrench MOSFETFeatures This N-Channel MOSFET has been designed • 11 A, 40 V. R = 13 mΩ @ V = 4.5 V DS(ON) GSspec ..
FDS4672A_NL ,40V N-Channel PowerTrench MOSFETApplications • DC/DC converter • High power and current handling capability DD5 4DD6 37 2GS8 1SSO ..
FQD18N20V2TM ,200V N-Channel Advanced QFET V2 seriesapplications such as automotive, highefficiency switching for DC/DC converters, and DC motorcontrol ..
FQD19N10 ,100V N-Channel MOSFETapplications such as audio amplifier,high efficiency switching DC/DC converters, and DC motorcontro ..
FQD19N10L ,100V LOGIC N-Channel MOSFETapplications such as high efficiencyswitching DC/DC converters, and DC motor control.DD ! !""!!"""" ..
FQD19N10LTF ,100V N-Channel Logic Level QFETapplications such as high efficiencyswitching DC/DC converters, and DC motor control.DD ! !""!!"""" ..
FQD19N10LTM ,100V N-Channel Logic Level QFETFeaturesThese N-Channel enhancement mode power field effect • 15.6A, 100V, R = 0.1Ω @V = 10 VDS(on) ..
FQD19N10TM ,100V N-Channel QFETFeaturesThese N-Channel enhancement mode power field effect • 15.6A, 100V, R = 0.1Ω @V = 10 VDS(on) ..
FDS4501H_NL
Complementary PowerTrench Half-Bridge MOSFET
FDS4501H G2 S2 G1 S1 May 2001 FDS4501H Ò Ò Complementary PowerTrench Half-Bridge MOSFET General Description Features This complementary MOSFET half-bridge device is · Q1: N-Channel produced using Fairchild’s advanced PowerTrench 9.3A, 30V R = 18 mW @ V = 10V process that has been especially tailored to minimize DS(on) GS the on-state resistance and yet maintain low gate R = 23 mW @ V = 4.5V DS(on) GS charge for superior switching performance. · Q2: P-Channel Applications –5.6A, –20V R = 46 mW @ V = –4.5V DS(on) GS · DC/DC converter R = 63 mW @ V = –2.5V DS(on) GS · Power management · Load switch · Battery protection Q2 DD 5 4 DD D D D D 6 3 Q1 7 2 G S 8 1 S SO-8SO-8 S Absolute Maximum Ratings T = 25°C unless otherwise noted A Symbol Parameter Q1 Q2 Units VDSS Drain-Source Voltage 30 –20 V VGSS Gate-Source Voltage ±20 ±8 V I Drain Current - Continuous (Note 1a) 9.3 –5.6 A D - Pulsed 20 –20 P Power Dissipation for Single Operation (Note 1a) 2.5 W D (Note 1b) 1.2 (Note 1c) 1 T , T Operating and Storage Junction Temperature Range –55 to +150 J STG °C Thermal Characteristics R Thermal Resistance, Junction-to-Ambient (Note 1a) 50 °C/W qJA Thermal Resistance, Junction-to-Case (Note 1) 25 R °C/W qJC Package Marking and Ordering Information Device Marking Device Reel Size Tape width Quantity FDS4501H FDS4501H 13” 12mm 2500 units Ó2001 FDS4501H Rev C(W)
