FDS4480 ,40V N-Channel PowerTrench MOSFETGeneral Description MOSFETChannel PowerTrench200February FDS4480 T = 25°C unless otherwise noted A ..
FDS4480_NL ,40V N-Channel PowerTrench MOSFETGeneral Description MOSFETChannel PowerTrench200February FDS4480 T = 25°C unless otherwise noted A ..
FDS4488 ,30V N-Channel PowerTrench MOSFETapplications where low in-line power loss and fast switching are required. • High performance trenc ..
FDS4488 ,30V N-Channel PowerTrench MOSFETFeatures This N -Channel MOSFET is produced using Fairchild • 7.9 A, 30 V. R = 22 mΩ @ V = 10 V DS ..
FDS4488 ,30V N-Channel PowerTrench MOSFETFDS4488 December 2001 FDS4488 Ò Ò30V N-Channel PowerTrench MOSFET
FDS4488 ,30V N-Channel PowerTrench MOSFETApplications • High power and current handling capability • DC/DC converter • Load switch • Motor d ..
FQD13N06L ,60V LOGIC N-Channel MOSFETFeaturesThese N-Channel enhancement mode power field effect • 11A, 60V, R = 0.115Ω @V = 10 VDS(on) ..
FQD13N06LTF ,60V N-Channel Logic level QFETapplications such as automotive, DC/DC converters, and high efficiency switching for powermanagemen ..
FQD13N06LTF ,60V N-Channel Logic level QFETapplications such as automotive, DC/DC converters, and high efficiency switching for powermanagemen ..
FQD13N06LTM ,60V N-Channel Logic level QFETFQD13N06L / FQU13N06LMay 2001TMQFETFQD13N06L / FQU13N06L60V LOGIC N-Channel MOSFET
FQD13N10 ,100V N-Channel MOSFETFeaturesThese N-Channel enhancement mode power field effect 10A, 100V, R = 0.18Ω @V = 10 VDS(on) ..
FQD13N10L ,100V LOGIC N-Channel MOSFETapplications such as highefficiency switching DC/DC converters, and DC motorcontrol.DD ! !""!!""""G ..
FDS4480
40V N-Channel PowerTrench MOSFET
FDS4480 2 FDS4480 Ò Ò 40V N- This N-Channel MOSFET has been designed · 10.8 A, 40 V. R = 12 W @ V = 10 V specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional · Lgate charge (29 nC) switching PWM controllers. It has been optimized for low gate charge, low R and fast switching speed. · High performance trench technology for extremely DS(ON) · High power and current handling capability · DC/DC converter DD54 DD DD63 DD 72 G G 81S S S S SSO-8S o T=25C unless otherwise noted A Ratings Units V Drain-Source Voltage V V -Source Voltage – V I Drain Current – Continuous 10.8 A D – Pulsed P Power Dissipation for Single Operation W D (Note 1c) T, T Operating and Storage Junction Temperature Range –55 to +175 °C J Thermal Characteristics R Thermal Resistance, Junction-to-Ambient °C/W q R Thermal Resistance, Junction-to-Ambient (Note 1c) °C/W q R Thermal Resistance, Junction-to-Case °C/W qJC Device Marking Reel Size Tape width Quantity FDS4480 FDS4480 12mm 2500 units FDS4480(W) Ó2 Corporation Fairchild Semiconductor 200 D Rev 13’’ Device Package Marking and Ordering Information 25(Note 1) JA 125 JA 50(Note 1a) STG 1.2 1.4 (Note 1b) 2.5(Note 1a) 45 (Note 1a) GSS 20+30/Gate DSS 40 ParameterSymbol Absolute Maximum Ratings Pin 1 SO-8 low RApplications DS(ON) ow GSDS(ON) m FeaturesGeneral Description MOSFETChannel PowerTrench 200February
