FDS4465 ,P-Channel 1.8V Specified PowerTrench MOSFETFeaturesThis P-Channel 1.8V specified MOSFET is a rugged• –13.5 A, –20 V. R = 8.5 mΩ @ V = –4.5 VDS ..
FDS4465_F085 ,P-Channel 1.8V Specified PowerTrench?MOSFETApplications • High performance trench technology for extremely low R DS(ON)• Power management • H ..
FDS4465_NL ,P-Channel 1.8V Specified PowerTrench MOSFETApplications • High performance trench technology for extremely • Power management low R DS(ON)• L ..
FDS4470 ,40V N-Channel PowerTrench MOSFETGeneral Description MOSFETChannel PowerTrench200February FDS44 T = 25°C unless otherwise noted A ..
FDS4480 ,40V N-Channel PowerTrench MOSFETGeneral Description MOSFETChannel PowerTrench200February FDS4480 T = 25°C unless otherwise noted A ..
FDS4480_NL ,40V N-Channel PowerTrench MOSFETGeneral Description MOSFETChannel PowerTrench200February FDS4480 T = 25°C unless otherwise noted A ..
FQD11P06 ,60V P-Channel MOSFETFeaturesThese P-Channel enhancement mode power field effect • -9.4A, -60V, R = 0.185Ω @V = -10 VDS( ..
FQD11P06TF ,60V P-Channel QFETFeaturesThese P-Channel enhancement mode power field effect -9.4A, -60V, R = 0.185Ω @V = -10 VDS( ..
FQD12N20L ,200V LOGIC N-Channel MOSFETFQD12N20L / FQU12N20LFebruary 2001FQD12N20L / FQU12N20L200V LOGIC N-Channel MOSFET
FQD12N20L ,200V LOGIC N-Channel MOSFETFeaturesThese N-Channel enhancement mode power field effect 9.0A, 200V, R = 0.28Ω @V = 10 VDS(on) ..
FQD12N20LTF ,200V N-Channel Logic Level QFETFeaturesThese N-Channel enhancement mode power field effect 9.0A, 200V, R = 0.28Ω @V = 10 VDS(on) ..
FQD12N20LTF ,200V N-Channel Logic Level QFETFeaturesThese N-Channel enhancement mode power field effect 9.0A, 200V, R = 0.28Ω @V = 10 VDS(on) ..
FDS4465
P-Channel 1.8V Specified PowerTrench MOSFET
FDS4465 October 2000 PRELIMINARY FDS4465 P-Channel 1.8V Specified PowerTrench MOSFET General Description Features This P-Channel 1.8V specified MOSFET is a rugged • –13.5 A, –20 V. R = 8.5 mΩ @ V = –4.5 V DS(ON) GS gate version of Fairchild Semiconductor’s advanced R = 10.5 mΩ @ V = –2.5 V DS(ON) GS PowerTrench process. It has been optimized for power R = 14 mΩ @ V = –1.8 V management applications with a wide range of gate DS(ON) GS drive voltage (1.8V – 8V). • Fast switching speed Applications • High performance trench technology for extremely • Power management low R DS(ON) • Load switch • High current and power handling capability • Battery protection D D 5 4 DD DD 6 3 D D 7 2 SO-8 G G 8 1 S S S S S Pin 1SO-8 S o Absolute Maximum Ratings T =25 C unless otherwise noted A Symbol Parameter Ratings Units V Drain-Source Voltage –20 V DSS V Gate-Source Voltage V GSS ±8 I Drain Current – Continuous (Note 1a) A D –13.5 – Pulsed –50 P Power Dissipation for Single Operation (Note 1a) 2.5 W D (Note 1b) 1.5 (Note 1c) 1.2 T , T Operating and Storage Junction Temperature Range -55 to +175 °C J STG Thermal Characteristics R Thermal Resistance, Junction-to-Ambient (Note 1a) 50 °C/W θJA Thermal Resistance, Junction-to-Ambient (Note 1c) 125 R °C/W θJA Thermal Resistance, Junction-to-Case (Note 1) 25 R °C/W θJC Package Marking and Ordering Information Device Marking Device Reel Size Tape width Quantity FDS4465 FDS4465 13’’ 12mm 2500 units 2000 Fairchild Semiconductor International FDS4465 Rev B(W)
