FDS4465_F085 ,P-Channel 1.8V Specified PowerTrench?MOSFETApplications • High performance trench technology for extremely low R DS(ON)• Power management • H ..
FDS4465_NL ,P-Channel 1.8V Specified PowerTrench MOSFETApplications • High performance trench technology for extremely • Power management low R DS(ON)• L ..
FDS4470 ,40V N-Channel PowerTrench MOSFETGeneral Description MOSFETChannel PowerTrench200February FDS44 T = 25°C unless otherwise noted A ..
FDS4480 ,40V N-Channel PowerTrench MOSFETGeneral Description MOSFETChannel PowerTrench200February FDS4480 T = 25°C unless otherwise noted A ..
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FQD12N20L ,200V LOGIC N-Channel MOSFETFQD12N20L / FQU12N20LFebruary 2001FQD12N20L / FQU12N20L200V LOGIC N-Channel MOSFET
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FQD12N20LTF ,200V N-Channel Logic Level QFETFeaturesThese N-Channel enhancement mode power field effect 9.0A, 200V, R = 0.28Ω @V = 10 VDS(on) ..
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FDS4465_F085
P-Channel 1.8V Specified PowerTrench?MOSFET
® FDS4465_F085 P-Channel 1.8V Specified PowerTrench MOSFET June 2012 FDS4465_F085 P-Channel 1.8V Specified PowerTrench MOSFET General Description Features This P-Channel 1.8V specified MOSFET is a rugged • –13.5 A, –20 V. R = 8.5 mΩ @ V = –4.5 V DS(ON) GS gate version of Fairchild Semiconductor’s advanced R = 10.5 mΩ @ V = –2.5 V DS(ON) GS PowerTrench process. It has been optimized for power RDS(ON) = 14 mΩ @ VGS = –1.8 V management applications with a wide range of gate drive voltage (1.8V – 8V). • Fast switching speed Applications • High performance trench technology for extremely low R DS(ON) • Power management • High current and power handling capability • Load switch • Battery protection • Qualified to AEC Q101 • RoHS Compliant D D 5 4 D D DD 6 3 D D 7 2 SO-8 G G 8 1 S S S S S Pin 1SO-8 S o Absolute Maximum Ratings T =25 C unless otherwise noted A Symbol Parameter Ratings Units VDSS Drain-Source Voltage –20 V V Gate-Source Voltage V GSS ±8 I Drain Current – Continuous (Note 1a) –13.5 A D – Pulsed –50 P Power Dissipation for Single Operation (Note 1a) 2.5 W D (Note 1b) 1.2 (Note 1c) 1 T , T Operating and Storage Junction Temperature Range –55 to +150 °C J STG Thermal Characteristics Thermal Resistance, Junction-to-Ambient (Note 1a) 50 R °C/W θJA Thermal Resistance, Junction-to-Ambient (Note 1c) 125 R °C/W θJA Thermal Resistance, Junction-to-Case (Note 1) 25 R °C/W θJC Package Marking and Ordering Information Device Marking Device Reel Size Tape width Quantity FDS4465 FDS4465_F085 13’’ 12mm 2500 units ©2012 1 FDS4465_F085 Rev. C1
