FDS4435BZ_F085 ,-30V P-Channel PowerTrench?MOSFETapplications common in Notebook Computers and DS(on) High power and current handling capability Po ..
FDS4465 ,P-Channel 1.8V Specified PowerTrench MOSFETFeaturesThis P-Channel 1.8V specified MOSFET is a rugged• –13.5 A, –20 V. R = 8.5 mΩ @ V = –4.5 VDS ..
FDS4465_F085 ,P-Channel 1.8V Specified PowerTrench?MOSFETApplications • High performance trench technology for extremely low R DS(ON)• Power management • H ..
FDS4465_NL ,P-Channel 1.8V Specified PowerTrench MOSFETApplications • High performance trench technology for extremely • Power management low R DS(ON)• L ..
FDS4470 ,40V N-Channel PowerTrench MOSFETGeneral Description MOSFETChannel PowerTrench200February FDS44 T = 25°C unless otherwise noted A ..
FDS4480 ,40V N-Channel PowerTrench MOSFETGeneral Description MOSFETChannel PowerTrench200February FDS4480 T = 25°C unless otherwise noted A ..
FQD10N20 ,200V N-Channel MOSFET
FQD10N20 ,200V N-Channel MOSFET
FQD10N20C ,200V N-Channel Advance Q-FET C-SeriesFeaturesThese N-Channel enhancement mode power field effect • 7.8A, 200V, R = 0.36Ω @V = 10 VDS(on) ..
FQD10N20CTM ,200V N-Channel Advance Q-FET C-SeriesFeaturesThese N-Channel enhancement mode power field effect • 7.8A, 200V, R = 0.36Ω @V = 10 VDS(on) ..
FQD10N20L ,200V LOGIC N-Channel MOSFETFeaturesThese N-Channel enhancement mode power field effect 7.6A, 200V, R = 0.36Ω @V = 10 VDS(on) ..
FQD10N20LTF ,200V N-Channel Logic Level QFETFeaturesThese N-Channel enhancement mode power field effect 7.6A, 200V, R = 0.36Ω @V = 10 VDS(on) ..
FDS4435BZ_F085
-30V P-Channel PowerTrench?MOSFET
® FDS4435BZ_F085 P-Channel PowerTrench MOSFET July 2009 FDS4435BZ_F085 ® P-Channel PowerTrench MOSFET� -30V, -8.8A, 20m� Features General Description � Max r = 20m� at V = -10V, I = -8.8A This P-Channel MOSFET is produced using Fairchild DS(on) GS D ® � Max r = 35m� at V = -4.5V, I = -6.7A Semiconductor’s advanced PowerTrench process that has DS(on) GS D � Extended V range (-25V) for battery applications been especially tailored to minimize the on-state resistance. GSS � HBM ESD protection level of ±3.8KV typical (note 3) This device is well suited for Power Management and load � High performance trench technology for extremely low r switching applications common in Notebook Computers and DS(on) � High power and current handling capability Portable Battery Packs. � Termination is Lead-free and RoHS compliant � Qualified to AEC Q101 D D D D 5 4 G D 6 3 S D 7 2 S D G S 8 S D 1 S S Pin 1 SO-8 MOSFET Maximum Ratings T = 25°C unless otherwise noted A Symbol Parameter Ratings Units V Drain to Source Voltage -30 V DS V Gate to Source Voltage ±25 V GS Drain Current -Continuous T = 25°C (Note 1a) -8.8 A I A D -Pulsed -50 Power Dissipation T = 25°C (Note 1a) 2.5 A P W D Power Dissipation T = 25°C (Note 1b) 1.0 A E Single Pulse Avalanche Energy (Note 4) 24 mJ AS T , T Operating and Storage Junction Temperature Range -55 to +150 °C J STG Thermal Characteristics R Thermal Resistance, Junction to Case 25 �JC °C/W R Thermal Resistance, Junction to Ambient (Note 1a) 50 �JA Package Marking and Ordering Information Device Marking Device Package Reel Size Tape Width Quantity FDS4435BZ FDS4435BZ_F085 SO-8 13’’ 12mm 2500units ©2009 1 FDS4435BZ_F085 Rev.A
