FDS4435.. ,30V P-Channel PowerTrench MOSFETFDS4435 October 2001 FDS4435 Ò Ò30V P-Channel PowerTrench MOSFET
FDS4435_NL ,30V P-Channel PowerTrench MOSFETApplications • Power management • High performance trench technology for extremely low RDS(ON) • ..
FDS4435A ,P-Channel Logic Level PowerTrench MOSFETOctober 2001
FDS4435-FDS4435..
30V P-Channel PowerTrench MOSFET
FDS4435 October 2001 FDS4435 Ò Ò 30V P-Channel PowerTrench MOSFET General Description Features This P-Channel MOSFET is a rugged gate version of · –8.8 A, –30 V R = 20 mW @ V = –10 V DS(ON) GS Fairchild Semiconductor’s advanced PowerTrench RDS(ON) = 35 mW @ V GS = –4.5 V process. It has been optimized for power management applications requiring a wide range of gave drive · Low gate charge (17nC typical) voltage ratings (4.5V – 25V). · Fast switching speed Applications · Power management · High performance trench technology for extremely low RDS(ON) · Load switch · Battery protection · High power and current handling capability DD 5 4 D D DD 6 3 D D 7 2 SO-8 G G 8 1 S S S S S Pin 1SO-8 S o Absolute Maximum Ratings TA=25 C unless otherwise noted Symbol Parameter Ratings Units V Drain-Source Voltage –30 V DSS V Gate-Source Voltage ±25 V GSS ID Drain Current – Continuous (Note 1a) –8.8 A – Pulsed –50 P Power Dissipation for Single Operation (Note 1a) 2.5 W D (Note 1b) 1.2 (Note 1c) 1 T , T Operating and Storage Junction Temperature Range –55 to +175 °C J STG Thermal Characteristics Thermal Resistance, Junction-to-Ambient (Note 1a) 50 RqJA °C/W R Thermal Resistance, Junction-to-Ambient (Note 1c) 125 °C/W qJA Thermal Resistance, Junction-to-Case (Note 1) 25 R °C/W qJC Package Marking and Ordering Information Device Marking Device Reel Size Tape width Quantity FDS4435 FDS4435 13’’ 12mm 2500 units Ó2001 FDS4435 Rev F1(W)
