FDS4410A ,Single N-Channel, Logic-Level, PowerTrench® MOSFET®FDS4410A Single N-Channel, Logic-Level, PowerTrench MOSFET ..
FDS4410A ,Single N-Channel, Logic-Level, PowerTrench® MOSFETapplications where low in-line power loss and fastR DS(ON)switching are required. High power and cu ..
FDS4410A ,Single N-Channel, Logic-Level, PowerTrench® MOSFETGeneral Description 10 A, 30 V. R = 13.5 mΩ @ V = 10 V This N-Channel Logic Level MOSFET is produce ..
FDS4435 ,30V P-Channel PowerTrench MOSFETFeatures This P-Channel MOSFET is a rugged gate version of • –8.8 A, –30 V R = 20 mΩ @ V = –10 V DS ..
FDS4435.. ,30V P-Channel PowerTrench MOSFETFDS4435 October 2001 FDS4435 Ò Ò30V P-Channel PowerTrench MOSFET
FDS4435_NL ,30V P-Channel PowerTrench MOSFETApplications • Power management • High performance trench technology for extremely low RDS(ON) • ..
FQB7N20TM ,200V N-Channel QFET
FQB7N40 ,400V N-Channel MOSFET
FQB7N60 ,600V N-Channel MOSFETFeaturesThese N-Channel enhancement mode power field effect 7.4A, 600V, R = 1.0Ω @V = 10 VDS(on) ..
FQB7N60TM ,600V N-Channel QFETFeaturesThese N-Channel enhancement mode power field effect 7.4A, 600V, R = 1.0Ω @V = 10 VDS(on) ..
FQB7P06 ,60V P-Channel MOSFETFeaturesThese P-Channel enhancement mode power field effect • -7A, -60V, R = 0.41Ω @V = -10 VDS(on) ..
FQB7P06TM ,60V P-Channel QFETFQB7P06 / FQI7P06May 2001TMQFETFQB7P06 / FQI7P0660V P-Channel MOSFET
FDS4410A
Single N-Channel, Logic-Level, PowerTrench® MOSFET
® FDS4410A Single N-Channel, Logic-Level, PowerTrench MOSFET May 2005 FDS4410A ® Single N-Channel, Logic-Level, PowerTrench MOSFET Features General Description ■ 10 A, 30 V. R = 13.5 mΩ @ V = 10 V This N-Channel Logic Level MOSFET is produced using Fair- DS(ON) GS R = 20 mΩ @ V = 4.5 V child Semiconductor’s advanced PowerTrench process that has DS(ON) GS been especially tailored to minimize the on-state resistance and ■ Fast switching speed yet maintain superior switching performance. ■ Low gate charge These devices are well suited for low voltage and battery ■ High performance trench technology for extremely low powered applications where low in-line power loss and fast R DS(ON) switching are required. ■ High power and current handling capability D 5 4 D D 6 3 D 7 2 G S SO-8 S 8 1 S Pin 1 Absolute Maximum Ratings T =25°C unless otherwise noted A Symbol Parameter Ratings Units V Drain–Source Voltage 30 V DSS V Gate–Source Voltage ±20 V GSS I Drain Current – Continuous (Note 1a) 10 A D – Pulsed 50 P Power Dissipation for Single Operation (Note 1a) 2.5 W D (Note 1b) 1.0 T , T Operating and Storage Junction Temperature Range –55 to +150 °C J STG Thermal Characteristics R Thermal Resistance, Junction-to-Ambient (Note 1a) 50 °C/W θJA (Note 1b) 125 R Thermal Resistance, Junction-to-Case (Note 1) 25 θJC Package Marking and Ordering Information Device Marking Device Reel Size Tape width Quantity FDS4410A FDS4410A 13" 12mm 2500 units 1 ©2005 FDS4410A Rev. B
